Float zone processing in a weightless environment

Abstract

Results are given for investigations into: (1) the physical limits which set the maximum practical diameters of Si crystals that can be processed by the float-zone method in a near weightless environment, and (2) the economic impact of large, space-produced Si crystals on the electronics industry. The stability of the melt is evaluated. Heat transfer and fluid flow within the melt as dependent on the crystal size and the degree and type of rotation imparted to the melt are studied. Methods of utilizing the weightless environment for the production of large, stress-free Si crystals of uniform composition are proposed. The economic effect of large size Si crystals, their potential applications, likely utilization and cost advantages in LSI, integrated circuits, and power devices are also evaluated. Foreseeable advantages of larger diameter wafers of good characteristics and the possibilities seen for greater perfection resulting from stress-free growth are discussed