A statistical summary of electrical characterization was performed on JANTX 1N5619 silicon diodes. Parameters are presented with test conditions, mean, standard deviation, lowest reading, 10% point, 90% point, and highest reading

Takeda, H.

English

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1
s	 ,
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N78-11293
(I,ASA-CIt-1504E2)	 JAN IRANSIS'TOR ANDDIODE
c^HAhACTENI"AT ION ZEST pFCGFAr,	 Unclas
1N5619 ,Final RP	
t IDCA Reliability Labs.,
HC A02/Mf 
AOSunnyvalpa Calif.)	 15 P	 CSCL 09C G3/33 53541
JAN TRANSISTOR AND DIODE
CHARACTERIZATION TEST PROGRAM
FINAL REPORT
FOR
JANTX DIODE
1N5619
FEBRUARY 1977
Prepared
for
GLORGE C MARSHALL SPACE FLIGHT CENTER
NATIONAL AERONAUTICS AND SPACE ADMINISTRATION
Mlershall Spec. Flight Canter, Alatama 35812
MSFCINASA CONTRACT No NAS3-31014
by
HIRO TAKEDA
DCA RELIABILITY LABORATORY
SPECIAL PRODUCTS DIVISION
975 BENICIA AVE.
SUNNYVALE, CALIFORNIA A086
1114
DCA RELIABILITY LABORATORY
t
A^
J
^	 t
3
JAN TRANSISTOR AND DIODE
CHARACTERIZATION TEST PROGRAM
FINAL REPORT
FOR
JANTX DIODE
1N5619
FEBRUARY 1977
Prepared
for
GEORGE C. MARSHALL SPACE FLIGHT CENTER
NATIONAL AERONAUTICS AND SPACE ADMINISTRATION
Marshall Space Flight Canter, Alabama 35811
MSFC!NASA CONTRACT No NASS 31944
by
HIRO TAKEDA
DCA RELIABILITY LABORATORY
SPECIAL PRODUCTS DIVISION
975 BENICIA AVE.
SUNNYVALE, CALIFORNIA 94088
aft-
FORUARD
This report is it statistical summary of the electrical
characterization performed on NASA Contract NA8-31944.
This is one of a group of thirty-nine (39) such reports
prepared on selected JAN and JANTX Transistors and Diodes
for the George C. Marshall Space Flight Center, Huntsville,
Alabama.	 The Contracting Officer's Technical Representative
was Mr. Howard B. Meeks.
This work was performed by DCA Reliability Laboratory,
Special Products Division, Sunnyvale, California under the
management of Mr. Robert Starr with the special assistance
of Mr. harry Lorenzo , Mr. Kenneth Radford and Mr. Iiiroharu
Takeda.
ii
rA
CONTENTS
1.0 INTRODUCTION	 .	 .	 .	 .	 .	 .	 .	 . .	 .	 .	 .	 .	 .	 .	 .	 .	 . .	 .	 .	 .	 .	 1-1
1.1	 Sample	 Selection	 .	 .	 . .	 .	 .	 .	 .	 .	 .	 .	 .	 . .	 .	 .	 .	 .	 1-1
1.2
	 Procure , ,ent
	
Guidelines .	 .	 .	 .	 .	 .	 .	 .	 .	 . .	 1-1
2.0 TECHNICAL	 SUMMARY	 .	 .	 .	 .	 . .	 .	 .	 .	 .	 .	 .	 .	 .	 . .	 .	 .	 .	 .	 2-1
2.1
	 Test	 Parameters	 and	 Conditions .	 .	 .	 .	 .	 . .	 .	 .	 .	 .	 2-1
2.1.1	 Reverse	 Current (I R )	 .	 .	 .	 .	 .	 .	 .	 . .	 .	 .	 .	 .	 2-1
2.1.2	 Forward	 Current (V F j	 .	 .	 .	 .	 .	 .	 .	 . .	 .	 .	 .	 .	 2-1
2.1.5	 output	 Capacitance (C	 )	 .	 .	 .	 .	 .	 . .	 .	 .	 .	 .	 2-10
2.1. 7	Reverse	 Recovery Time	 ( t rr )	 .	 .	 .	 . .	 .	 .	 .	 .	 2-1
2.2
	 Unit	 Definitions	 .	 .	 . .	 .	 .	 .	 .	 .	 .	 .	 .	 . .	 .	 .	 .	 .	 2-2
3.0 STATISTICAL	 SUMMARY	 .	 .	 .	 . .	 .	 .	 .	 .	 .	 .	 .	 .	 . .	 .	 .	 .	 .	 3-1
4.0 HISTOGRAM	 DATA	 .	 .	 .	 .	 .	 .	 . .	 .	 .	 .	 .	 .	 .	 .	 .	 . .	 .	 .	 .	 .	 4- 1
4.1	 1 	 .	 .	 .	 .	 .	 .	 .	 .	 .	 . .	 .	 .	 .	 .	 .	 .	 .	 .	 . .	 .	 .	 .	 .	 4-2
4.2	 V F I	 .	 .	 .	 .	 .	 .	 .	 .	 .	 . .	 .	 .	 .	 .	 .	 .	 .	 .	 . .	 .	 .	 .	 .	 4-9
4.3	 V F2	 .	 .	 .	 .	 .	 .	 .	 ..	 . .	 .	 .	 .	 .	 .	 .	 .	 .	 . .	 .	 .	 .	 .	 4-16
4.4	 V F3	 .	 .	 .	 .	 .	 .	 .	 .	 .	 . .	 .	 .	 .	 .	 .	 .	 .	 .	 . .	 .	 .	 .	 .	 4-23
4 . 5	 Co I .	 .	 .	 .	 .	 .	 . .	 .	 .	 .	 .	 4-30
.	 .	 .	 .	 .	 .	 . .	 .	 .	 .	 .
	
4-344. 6	 C ot
4.	 7	 t	 .	 .	 .	 .	 .	 .	 .	 .	 .	 . .	 .	 .	 .	 .	 .	 .	 .	 .	 . .	 .	 .	 .	 .	 4-38
r ;,
r
I	 ^
1__
I	 ^l 'T
CONTENTS (CONTINUED)
5.0	 NUMERICAL	 DATA	 T A 250C
(!look 2 EC	 43 &	 EC	 02	 MSFC	 only)	 .	 .	 .	 .	 .	 5-1
6.0	 NUM-RI CAL	 DATA	 T A = +150oC
(Book 2 EC	 43 &	 EC	 02	 MSFC	 only)	 .	 .	 .	 .	 .	 6-1
7.0
	
NUMERICAL DATA T A w -650C
(Book 2 EC	 43 &	 EC	 02	 MSFC	 only)	 .	 .	 .	 .	 .	 7-1
A
iv
II	 `1	 I
LIS'r OF ILLUSTRATIONS
FIGURE
2-1	 Internal Construction Seintech . . . •
2-2	 Internal Construction Semtech . . . .
2-3
	
Internal Construction Micro Semiconduc
11
t
7'
I	
1.0
	
INTRODUCTION
1
The objective of this characterization program is to
pravidv the neces.,ary data to create a new class of
19500 detail specification~ "JAN A CLASS".
1.1 SAMPLE SELECTION
Sample selection was made according to the following
criteria:
1. Manufacturer or qualified distributor.
2. Two vendors.
3. Two date codes.
1.2 PROCUREMENT GUIDELINES
The general guidelines for procurement ware:
1. Two QPL vendors
2. JAN or JANTX
3. Two (2) manufacturing lots (Date Codes), Lwenty-
seven (27) from each lot.
fl
................
_.^ !	 —i	 _
1-1
2.0 TECHNICAL SUMMARY
The devices used in this report were JANTX 1N5619 Silicon
Diodes manufactured by Micro Semiconductor and Se-ntech.
All data was acquired with three (3) digit accuracy. 	 The
data processing and calculation of statistical p	 a•ieters
was performed by the Te t trunix S-3260 computer system using
four (4) digit display.
I'
2.1 TEST PARAMETERS AND CONDITIONS
2.1.1 1R
v  =
(Max. Rated	 V R )	 -	 600V	 T A -	 25 0 C	 & 1500C
2.1.2 Vri I F - (10% of	 Rated I F )	 - 300mA T A -	 25
0 C &	 -650C
2.1.3 V F2 I F	= (50% of	 Rated I l.)	 = 1.5mA T A -	 25 0 C &	 -650C
2.1.4 V w3 I F	- (100 of	 Rated I F ) -	 3.0mA T A -	 25 0 C	 &	 -650C
2.1.5 C ol V 	 - OV	 F =	
100KIlZ T A =	 250C
2.1.6 C ot V 	 = OV	 F =	 1MHZ TA =	 250C
2.1.7 t rr 7'A =
	
25oC
2-2
ORIGINAL PAGE A
OF POOR QUAUTV
2 UNIT DEFINITIONS
NAME SYM40L MULTIPLIER
Kilo
M1111
Micro
Nano
Pico
K
M
U
N
1'
1033
?0_6
10-g
10_ 12
10
EIxample using a statistical summary section:
.r.-
	
] H	 1 N AMPS	 Al	 15 DKGHE KS
Al VN=2.64 VUh•rs
--	 - --	 --- -- - -
rAllI'll/	 7603:
	 %.5 I q P '	 I1 ^1 ^1)	 2.01 01.1	 2.W4QfA	 j. )HOhi
^al^lr.t/
	 /ti5u:	 ?.47{r.,	 '	 1l	 9t1	 2.01014	 i.11	 2.I80M
:SIhM/	 750
	 l..`>47M	 42b.50	 I.H[UM	 h()M
Milli	 Micro
Example using a histogram:
JR6 	
a
	
1.13M	 1.61M	 2.89M
	 2.37M	 3. am	 3.3319
	
1.37M	 1.855	 2.3311	 2.81M	 3.29M	 J.77
OUT 0	 \	
+-M	8 OIID
Milli
4
'	 a
I`
•r
ii
A^^►
FIGURE 1
Device Number: IN5619
	 'Typical Overall Cross-
27 Diameters	 Sectional View
D/C 7631	 MFR: Semtech
	 SIN  EO27681
FIGURE 2	 - -.- ----	 -^--
Device Number: IN5619	 Typical Overall Cross-
27 Diameters	 Sectional View
D/C 7531	 MFR: Semtech	 SIN EO27708
2-3
I
10
Y.
r
FIGURP 3	 —
Device Number: IN5619	 Typical Overall Cross-
2'I Diameters	 Sectional View
D/C 7633	 MFR: MSC	 SIN E027736
w n
2 -
13.0 STATISTICAL SUMMARY
The Ste`.lstical Summary, pages 3-2 to 3-4, are a
consolidated presentation of the data acquired for-
matted for easy Vendor to Vendor and date code to
date code analysis.
	 Each parameter is presented with
Test Conditions, Mean, Standard Deviation. Lowest
Reading, 107. Point (where 10% of all readings are
equal to or less than the indicated reading), 90%
Point (where 90% of all readings are equal to or less
than indicated reading) and the 11igliest heading.
It should he noted the Mean p r esented in the surnmary
may vary slightly from that presented on the histograms
due to a slight variation in the data base used for
calculation.
EXAMPLE:
Semtech:	
I 
	 VR = 600V	 '1.A - 250C
Summary:	 ?LEAN	 65.43nA
Histogram:	 MEAN 65.59nA
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JAN transistor and diode characterization test program, JANTX diode 1N5619

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