Development of a high efficiency thin silicon solar cell

Abstract

Significant improvements in open-circuit voltage and conversion efficiency, even on relatively high bulk resistivity silicon, were achieved by using a screen-printed aluminum paste back surface field. A 4 sq cm 50 micron m thick cell was fabricated from textured 10 omega-cm silicon which had an open-circuit voltage of 595 mV and AMO conversion efficiency at 25 C of 14.3%. The best 4 sq cm 50 micron thick cell (2 omega-cm silicon) produced had an open-circuit voltage of 607 mV and an AMO conversion efficiency of 15%. Processing modifications are described which resulted in better front contact integrity and reduced breakage. These modifications were utilized in the thin cell pilot line to fabricate 4 sq cm cells with an average AMO conversion efficiency at 25 C of better than 12.5% and with lot yields as great as 51% of starts; a production rate of 10,000 cells per month was demonstrated. A pilot line was operated which produced large area (25 cm) ultra-thin cells with an average AMO conversion efficiency at 25 deg of better than 11.5% and a lot yield as high as 17%