High density circuit technology

Abstract

Acquisition of polyimide materials for inter-metal dielectrics was obtained from three vendors, with considerable evaluation conducted on the Dupont PI2550 material. Experimental results indicate this material can be patterned using contact printing to line width far below 0.1 mils. Optimum line width is acquired using plasma etch equipment. Metal lift-off experiments on thermal evaporated films were optimized for application to sputtered deposited films. Alternate metal-lift-off experiments are proposed for future investigation. Dry processing equipment studies and future trends in VLSI fabrication techniques are on-going