The current NASA program for 20 and 30 GHz monolithic microwave integrated circuit (MMIC) technology is reviewed. The advantages of MMIC are discussed. Millimeter wavelength MMIC applications and technology for communications systems are discussed. Passive and active MMIC compatible components for millimeter wavelength applications are investigated. The cost of a millimeter wavelength MMIC's is projected

Anzic, G.

Connolly, D. J.

Downey, A. N.

English

NASA Technical Reports Server

NASA Technical Memorandum 83749
MMIC Technology for Advanced
Space Communications Systems
A. N. Downey, D. J. Connolly,
and G. Anzic
Lewis Research Center
Cleveland, Ohio
Prepared for the
Seventeenth Annual Electronics and Aerospace Conference (EASCON)
sponsored by the Institute of Electrical and Electronics Engineers
Washington, D.C., September 10-12, 1984
NASA
https://ntrs.nasa.gov/search.jsp?R=19840022078 2020-03-20T22:46:53+00:00Z
MMIC TECHNOLOGY FOR ADVANCED SPACE COMMUNICATIONS SYSTEMS
A. N. Downey, D. J. Connolly, and G. Anzic
National Aeronautics and Space Administration
Lewis Research Center
Cleveland, Ohio 44135
ABSTRACT
The current NASA program for 20 and 30 GHz
Monolithic Microwave Integrated Circuit (MMIC)
technology is reviewed. MMIC advantages are dis-
cussed. Millimeter wavelength MMIC applications
and technology for communications systems are pre-
sented. Passive and active MMIC-compatible com-
ponents for millimeter wavelength applications are
investigated. The cost of millimeter wavelength
MMIC's is projected.
INTRODUCTION
Advanced space communications systems concepts
such as NASA's Advanced Communications Technology
Satellite (ACTS), scheduled for launch in the late
1980's, are using electrically steerable phased
array antennas for transmit and receive
applications. These antennas require arrays of
several hundred radiating or receiving elements,
with controllable phase and gain for each
element. The phase and gain of each array member
is adjusted to shape the transmit (or receive)
beam and "point" the antenna to the proper
location, allowing faster and less bulky control
of the beam compared to conventional mechanical
pointing. An MMIC transmit or receive module on
each array element would offer significant
advantages over other methods (1). MMIC's offer
advantages in reliability, reduced parasitics,
reproducibility, bandwidth, and system efficiency
over hybrid approaches. Many functions can be
contained on one chip, allowing increased design
flexibility, small size, low weight, and low cost,
making MMIC's very attractive for communications
systems.
CURRENT NASA PROGRAMS FOR 20
AND 30 GHz MMIC TECHNOLOGY
NASA Lewis Research Center is currently
managing several contract efforts to develop the
technology necessary for MMIC-based transmitters
and receivers at 20 and 30 GHz, respectively (fig.
1). A monolithic 20 GHz variable power amplifier
(VPA) module (Texas Instruments) and a 20 GHz
phase control module (Rockwell International) have
been under development since early 1982. 30 GHz
receive modules are being developed by Hughes and
Honeywell in parallel contracts awarded in late
1982. A short description of each MMIC
development contract and a summary of progress to
date follows.
20 GHz Variable Power Amplifier
The 20 GHz VPA is a fully monolithic GaAs
module providing 2.5 GHz of bandwidth (17.7 to
20.2 GHz) at five digitally controlled power
levels. Contract goals are 500 mW rf output power
with 20 dB minimum gain and 15 percent efficiency
at the maximum power condition, and 12.5 mW output
power with 4 dB minimum gain and 6 percent
efficiency at the lowest power "on" condition. In
the off state, maximum dissipation will be 50 mW.
Intermodulation products are to be 20 dB below the
carrier. A TTL-compatible four-bit digital input
is used to control the discrete power levels.
The VPA is divided into two submodules; the
control submodule and the amplifier submodule
(fig. 2). The control module, developed during
the first year of the program, is a four-bit
TTL-compatible digital to analog converter
designed to control the gain of the FET's used in
the amplifier submodule. The amplifier submodule
uses dual-gate gallium arsenide FET's for the
four-stage amplifier. To date, a four-stage, .
single-gate amplifier has been produced with an
output power of 630 mW and 25 dB gain, with 21
percent power added efficiency at 18 GHz. This
single-gate amplifier is a preliminary version of
the dual gate amplifier which is being worked on
now. The dual-gate version promises higher
efficiency in addition to providing the power
control capability. The D/A converter will be
integrated with the dual-gate version. The total
chip size will be 1.4 mm x 4.4 mm.
20 GHz Digital Phase Shift Module
The 20 GHz digital phase shift module (also
known as the 20 GHz transmit module) is being
developed for NASA by Rockwell, International,
Thousand Oaks, California. Technology goals for
this contract are 200 mW output power with 16 dB
gain, 15 percent power added efficiency, and a 2.5
GHz bandwidth (17.7 - 20.2 GHz). Like the VPA,
intermodulation products are to be 20 dB below the
carrier. A five-bit phase shifter completes the
transmit module. Initial goals require the
development and delivery of fully monolithic
modules.
For development purposes, the 20 GHz transmit
module was divided into eight submodules; five
phase shifter submodules of 11.25°, 22.5°, 45°,
90°, and 180° bits, a digital control submodule, a
buffer amplifier, and a power amplifier (see fig.
3). These eight submodules were developed
separately and, in the final version, will be
integrated into a fully monolithic transmit
module. Recent studies by COMSAT and Harris on 20
GHz phased array transmit antennas indicate that
it would be desirable to have a separate phase
shift module and amplifier/power module. This
corresponds to separating the transmit module
between the buffer amplifier and the power
amplifier submodule. This is being done under a
modification of the original Rockwell contract.
An actual phased array antenna is being developed
by General Electric's Space Systems Division for
NASA's Antenna Section, using Rockwell phase shift
and amplifier modules, and TI variable power
amplifier modules.
30 GHz Receive Module
30 GHz receive modules are being developed
under two parallel contracts awarded to
Hughes-Torrance Research Center and Honeywell's
Corporate Technology Center in late 1982. The
technology goals for the 30 GHz receive are: 2.5
GHz bandwidth (27.5 to 30 GHz), rf to if gain of
30 dB with a noise figure of 5 dB or less, a
five-bit phase shifter and a five-level gain
control. Block diagrams for both the Honeywell
approach and the Hughes approach are shown in Fig.
4. The receive module is made up of four
submodules; a Low Noise Amplifier (LNA), phase
shifter, gain control and LO to if submodule. A
major difference between the two contractor's
approaches is that Honeywell performs the gain
control at rf and Hughes controls the gain at if.
Both contractors are using sub-half-micron
gate length FET's for use in the LNA. The LNA was
the submodule Hughes elected to work on first.
Preliminary results have produced a FET with a
noise figure of 4.5 dB with an associated gain of
11.5 dB across the band.
Hughes'initial phase shifter approach was to
investigate an analog phase shifter based on a
branch line coupler. Although not a true time
delay phase shifter, the analog phase shifter
approach promises a higher yield due to the small
area it occupies.
The submodule first worked on by Honeywell is
the phase shift submodule. A switched
transmission line phase shifter using unbiased
FET's (300 ym gate periphery) in a shunt mounted
configuration. Further work has concentrated on
self-aligned gate (SAG) FET's used in a series
mounted configuration. To date, an insertion loss
of approximately 2.5 dB per bit over theo27.5oto
30 GHz band has been achieved for the 45°, 90°,
and 180° bits. A loaded line phase shifter is
expected to be used to cover the 11.25°, and 22.5°
bits.
MMIC APPLICATIONS AND TECHNOLOGY FOR MILLI-
METER WAVELENGTH COMMUNICATION SYSTEMS
A prime candidate for the application of MMIC
technology at millimeter wave frequencies is
intersatellite links between communications
satellites. Frequency bands allocated for
intersatellite links are at 23 and 32 GHz, 54 to
58 GHz, and 59 to 64 GHz. Some perhaps obvious
benefits of intersatellite links, especially at
the high frequencies are the lack of atmospheric
attenuation and the immunity from terrestrially
based eavesdropping and interference. The low
power requirements resulting from low atmospheric
losses and increased antenna gain for a given
antenna size make solid state MMIC devices a
logical choice for intersatellite link
applications.
There are some advantages of MMIC's which
become more apparent at higher frequencies. Most
of these advantages are tied to the inverse
relationship between wavelength and frequency.
For example, as the frequency of operation
increases, the linear size of the circuit element
decreases and the number of circuits in a given
area increases (fig. 5). This reduction in size
for a circuit of a given complexity should result
in a potential decrease in cost. Another
characteristic that improves with frequency is the
attenuation per wavelength (fig. 6); as circuit
elements shrink, so does the associated
attenuation through the circuit elements. The
performance of MMIC passive components tends to
decline quite slowly, or in some cases, improve
with increasing frequency.
There are many MMIC-compatible millimeter
wavelength active devices either in use or under
development. Both Schottky diodes and GaAs FET's
have been the mainstay of millimeter wavelength
MMIC circuits. High mobility materials and new
device structures have great potential for use in
millimeter wave systems. The High Electron
Mobility Transistor (HEMT), Permeable Base
Transistor, Opposed Gate Source Transistor (OGST),
Vertical FET, and the Planar Doped Barrier
Transistor are all under development for use in
these high frequencies.
Cost estimates have been projected for complex
(10 function) MMIC's for frequencies well into the
millimeter wavelength range. Figure 7 shows
projected cost versus frequency with yield as a
parameter. These estimates assume a pilot line
throughput.of 10^ cm2 of GaAs per year and
include dc wafer probing and dicing. Further MMIC
cost estimates, including packaging and rf testing
(yield = 1 percent), predict a cost of ?1000 per
60 GHz MMIC circuit if the rate of testing were
one circuit per day. A test rate of one circuit
per hour is estimated to bring the per circuit
cost down to less than $300.
CONCLUSION
The current NASA program for 20 and 30 GHz
MMIC technology is showing encouraging results in
developing solid state monolithic circuits. The
potential for intersatellite links makes 60 GHz a
likely frequency range for further MMIC
development. The use-of monolithic solid state
circuits appears both feasible and cost effective
in the millimeter frequency range.
REFERENCES
1. 6. Anzic, T. J. Kascak, A. N. Downey, D. C.
-Liu, and D. J. Connolly, "Microwave Monolithic
Integrated Circuit Development for Future
Spaceborne Phased Array Antennas", NASA TM-
83518, Dec. 1983.
G. Anzic, D. J. Connolly, E. J. Haugland, H.
G. Kosmahl, and J. S. Chitwood, "A Study of 60
Gigahertz Intersatellite Link Applications",
NASA TM-83337, June, 1983.
D. J. Connolly, G. Anzic, and A. N. Downey,
"The Role of GaAs ICs In Future Satellite
Communications Applications", in Reliable,
Survivable and Affordable Electronics, the
1983 Space Electronics Conf., 1983.
20 GHz VARIABLE POWER AMPLIFIER
MODULE TEXAS INSTRUMENTS
20 GHz PHASE CONTROL
MODULE ROCKWELL
20 GHz ANTENNA
CONFIG. STUDIES (2)
HARRIS AND COMSAT
20 GHz TRANSMIT MODULE
CONTRACT - TBD
TECHNOLOGY
READY FOR
POC PROGRAM
20 GHz MMIC BASED ANTENNA EXPERIMENT
TECHNOLOGY
READY FOR
POC PROGRAM
NEAR FIELD RANGE
CONST. AND CHECKOUT
30/20 GHz
R/T ANTENNA
DEVELOPMENT
30 GHz ANTENNA
CONFIGURATION
STUDIES
30 GHz MMIC BASED
ANTENNA EXPERIMENT
TECHNOLOGY
READY FOR
POC PROGRAM
30 GHz RECEIVE MODULE (2) HUGHES AND HONEYWELL
TECHNOLOGY
READY FOR
POC PROGRAM
1981 | 1982 1983 | 1984 1985 | 1986 1987 1988 | 1989
Figure 1. - NASA's program for the application of MMIC Technology.
TTL
RF
D/A CONVERTER
T I IT
AMPLIFIER SUBMODULE RF
OUT
Figure 2. - 20 GHz VPA.
Figure 3. - 20 GHz transmit module.
TTUOGIC SIGNALS
(FOR OIGIIAl CONIROU
li tern PHASE REFERENCE SIGNAL
AI 22 GHz
(a) Honeywell approach.
CHIP!
DATA
IN
(b) Hughes approach.
Figure 4. - Block diagram of receiver.
LU
00
400
200
5 100
S' 80
u_
£ 60
20
10
-LINEAR
DIMENSION
(mils)
NUMBER OF
CIRCUITS
4 6 8 10
f, GHz
20
Figure 5. - Estimated linear size and density
of monolithic circuits on a one square inch
GaAs wafer versus frequency.
CO
-o
.5
.4
.3
.2
.1
0
tan 6
-10-2
10 20 30 40 50 60 70 80 90 100
FREQUENCY, GHz
Figure 6. - Loss of 50 Q microstrip on 4-mil GaAs sub-
strate.
400
200
100
80
£ 60
I ^
§ 20
10
8
6
20 40 60 80
FREQUENCY, GHz
100 120
Figure 7. - Projected cost of complex (10 function) MMIC.
Assumes 105 cm2/yr pilot line - through wafer probe
and dicing.
1.'Report No.
NASA TM-83749
2. Government Accession No. 3. Recipient's Catalog No.
4. Title and Subtitle
MMIC Technology for Advanced Space Communications
Systems
5. Report Date
,6. Performing Organization Code
506-58-22
7. Authorfs)
A. N. Downey, D. J. Connolly, and G. Anzic
8. Performing Organization Report No.
E-2236
10. Work Unit No.
9. Performing Organization Name and Address
National Aeronautics and Space Administration
Lewis Research Center
Cleveland, Ohio 44135
11. Contract or Grant No.
12. Sponsoring Agency Name and Address
National Aeronautics and Space Administration
Washington, D.C. 20546
13. Type of Report and Period Covered
Technical Memorandum
14. Sponsoring Agency Code
15. Supplementary Notes
Prepared for the Seventeenth Annual Electronics and Aerospace Conference
(EASCON) sponsored by the Institute of Electrical and Electronics Engineers,
Washington, D.C., September 10-12, 1984.
16. Abstract
The current NASA program for 20 and 30 GHz Monolithic Microwave Integrated
Circuit (MMIC) technology is reviewed. MMIC advantages are discussed. Milli-
meter wavelength MMIC applications and technology for communications systems
are presented. Passive and active MMIC-compatible components for millimeter
wavelength applications are investigated. The cost of millimeter wavelength
MMIC's is projected.
17. Key Words (Suggested by Author(s))
Microwaves; Integrated circuits; Milli-
meter waves; Monolithic Microwave
Integrated Circuits
18. Distribution Statement
Unclassified - unlimited
STAR Category 32
19. Security Classif. (of this report)
Unclassified
20. Security Classif. (of this page)
Unclassified
21. No. of pages 22. Price*
'For sale by the National Technical Information Service, Springfield, Virginia 22161
National Aeronautics and
Space Administration
Washington, D.C.
20546
Official Business
Penalty for Private Use, $300
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