The research program of Semiconductor Research Corp. is managed as three overlapping areas: Manufacturing Sciences, Design Sciences and Microstructure Sciences. A total of 40 universities are participating in the performance of over 200 research tasks. The goals and direction of Manufacturing Sciences research became more clearly focused through the efforts of the Manufacturing Sciences Committee of the SRC Technical Advisory Board (TAB). The mission of the SRC Manufacturing Research is the quantification, control, and understanding of semiconductor manufacturing process necessary to achieve a predictable and profitable product output in the competitive environment of the next decade. The 1994 integrated circuit factory must demonstrate a three level hierarchy of control: (1) operation control, (2) process control, and (3) process design. These levels of control are briefly discussed

Phillips, D. Howard

English

NASA Technical Reports Server

N81-27205 
MEASUREMENT SCIENCE AND MANUFACTURING SCIENCE RESEARCH - - 
D. Howard P h i l l i p s  
Semiconductor Research Corporat ion 
Research Tr iangle Park, N. C. 
ABSTRACT 
The SRC* was es tab l i shed t o  enhance the  compet i t iveness o f  t he  U.S. 
semiconductor i n d u s t r y  through the support o f  u n i v e r s i t y  research and 
education. Emphasis i s  being placed on (1) c r e a t i n g  and ma in ta in ing  a gener ic  
r e s e a r c h  base i n  i n t e g r a t e d  c i r c u i t  t e c h n o l o g i e s  i n  t h e  U.S. u n i v e r s i t y  
community; ( 2 )  i n s u r i n g  a con t inu ing  supply o f  h i g h l y  q u a l i f i e d  s tudents (and 
t h e  f a c u l t y  requ i red  t o  educate them) t o  support t he  growth and innova t ion  o f  
t h e  i ndus t r y ;  and ( 3 )  broadening t h e  U.S. u n i v e r s i t y  base o f  m ic roe lec t ron i c  
research and educat ion through establishment of centers  o f  excel lence, seeding 
new e f f o r t s ,  and developing new cu r r i cu la .  
The research  program of t h e  SRC i s  managed as t h r e e  over lapp ing  areas: 
Manufactur ing Sciences, Design Sciences and M ic ros t ruc tu re  Sciences. A t o t a l  
o f  40 u n i v e r s i t i e s  a re  p a r t i c i p a t i n g  i n  t h e  performance o f  over  200 research 
tasks. 
Dur ing  t h e  past year, t h e  goals and d i r e c t i o n s  o f  Manufactur ing Sciences 
research became more c l e a r l y  focused through t h e  e f f o r t s  o f  t h e  Manufactur ing 
Sciences Committee o f  t h e  SRC Technical Advisory Board (TAB). 
The m i s s i o n  o f  t h e  SRC M a n u f a c t u r i n g  Research i s  t h e  q u a n t i f i c a t i o n ,  
c o n t r o l  , and understanding o f  semiconductor manufactur ing processes necessary 
t o  achieve a p r e d i c t a b l e  and p r o f i t a b l e  product ou tpu t  i n  t h e  compet i t i ve  
environment o f  t h e  next  decade. 
The 1994 i n t e g r a t e d  c i r c u i t  fac to ry  must demonstrate a th ree - leve l  
h ie rarchy  o f  c o n t r o l :  (1) opera t ion  con t ro l ,  ( 2 )  process c o n t r o l ,  and (3 )  
process design. Operat ional  con t ro l  covers process f l o w  execut ion and 
inventory  con t ro l .  U n i t  processes and t h e i r  c o n t r o l  must assure t h a t  t h e  
equipment y i e l d  t h e  an t i c ipa ted  r e s u l t s  a t  t h e  expected p a r t i c u l a t e  
contaminat ion l eve l .  P a r t i c l e  t ranspor t  t o  a wafer sur face  and capture by 
t h a t  sur face  depend on many var iab les  such as aerosol  v e l o c i t y  and p a r t i c l e  
s ize.  Whi le g r a v i t y  i s  a minor mechanism f o r  submicron aerosol  capture by a 
w a f e r ,  i t  can  be t h e  dominant  mechanism f o r  c a p t u r e  o f  l a r g e r  a e r o s o l  
p a r t i c l e s .  D i f f u s i o n ,  i n te rcep t ion ,  and i n e r t i a l  impact ion a r e  t h e  c l a s s i c a l  
mechanisms by which f i l t e r s  capture submicron p a r t i c l e s ;  they apply  t o  wafers 
as we l l .  A l l  t h e  aerosol  p roper t i es  t h a t  in f luence these mechanisms w i l l  
a f f e c t  p a r t i c l e  depos i t i on  on a wafer. I n  add i t i on ,  t h e  wafer sur face i t s e l f  
may be a s i g n i f i c a n t  va r iab le  p r i m a r i l y  through e l e c t r i c a l  capture forces. 
E l e c t r i c a l  charges on a surface c rea te  e l e c t r i c a l  capture fo rces  t h a t  can make 
up an impor tan t  mechanism fo r  t h e  deposi t ion o f  submicron aerosol  p a r t i c l e s  on 
t h a t  sur face.  E l e c t r o s t a t i c  forces w i l l  rece ive  spec ia l  emphasis i n  upcoming 
s tud ies  o f  p a r t i c l e  t r a n s p o r t  a t  t h e  Research T r i a n g l e  I n s t i t u t e .  The use of 
patterned, e l e c t r i c a l  b iased s i 1  i c o n  substrates t o  d e l i b e r a t e l y  c rea te  l o c a l  
areas o f  p o t e n t i a l l y  enhanced e l e c t r i c a l  capture i s  proposed as p a r t  o f  t h e  
t e s t  ma t r i x .  The dependence o f  p a r t i c l e  depos i t i on  upon e l e c t r i c a l  fo rces  
w i l l  thus be s tud ied  w i t h  h igher  spa t ia l  r e s o l u t i o n  than he re to fo re  poss ib le .  
Appropr ia te  t e s t  s t ruc tu res  i nc lude  both metal1 i zed  pa t te rns  on oxides and 
ox id i zed  s i l i c o n  surfaces. 
*Semiconductor Research Corporat ion (SRC) 
7 
https://ntrs.nasa.gov/search.jsp?R=19870017772 2020-03-20T09:25:29+00:00Z
Subsurface imaging methods are impor tan t  f o r  eva lua t i on  o f  device geome- 
t r i e s  which a r e  i n h e r e n t l y  three-dimensional. Accurate depth p r o f i  1 i n g  
methods a re  necessary f o r  f a i l u r e  ana lys i s  and process evaluat ion.  SRC re- 
search a t  the U n i v e r s i t y  o f  Nor th Caro l ina  a t  Chapel H i l l  has shown t h a t  t h e  
electron-beam-induced cu r ren t  (EBIC), BSE, and Time-Resolved Capac i t i ve  
Coup1 i n g  Voltage Contrast  (TRCCVC) imaging modes prov ide  in fo rmat ion  about 
bur ied  s t ruc tu res  and 1 ayer th ickness. A t  submicron dimensions, mechanical 
p rob i  ng o f  devices i s near l y  impossi b l  e and usual l y  d e s t r u c t i v e  when appl i ed 
t o  i n t e g r a t e d  c i r c u i t  f a b r i c a t i o n  techno logy .  The e l e c t r o n  beam o f  t h e  
scanning e l e c t r o n  m i  croscope (SEM) i s an a1 t e r n a t  i ve t o  mechanical probes and 
i s  a standard t o o l  i n  t h e  mic roe lec t ron ics  indus t ry .  Unfor tunate ly ,  many of 
t h e  SEM imaging modes can p o t e n t i a l l y  induce damage i n  r a d i a t i o n - s e n s i t i v e  
devices. Low energy ( <  1 keV), nondestruct ive SEM imaging techniques t h a t  
avo id  r a d i a t i o n  damage are  being developed and modeled i n  t h i s  SRC p r o j e c t .  
C a p a c i t i v e  c o u p l i n g  v o l t a g e  c o n t r a s t  (CCVC) i s  a low-energy  method t h a t  
prov ides both vo l tage and depth in fo rmat ion  o f  s t r u c t u r e s  bu r ied  under 
pass ivat ion.  CCVC u t i l i z e s  the  dynamic response o f  low energy e lec t rons  near 
t h e  sur face t o  changes i n  vo l tage o r  d i f f e rences  i n  s t r u c t u r e  depth. Vol tage 
reso lu t i ons  o f  40 mV have been recorded us ing  t h i s  technique, w i t h  a s p a t i a l  
r e s o l u t i o n  o f  l e s s  t h a t  one micrometer. Depth p r o f i l i n g  has been performed on 
both biased and f l o a t i n g  devices. Ana lys is  can be performed d u r i n g  
manufacturing, s ince  no b ias  i s  requi red and no mechanical probing i s  needed. 
The i n c l u s i o n  o f  a d a p t i v e  c o n t r o l  w i l l  be a r e s u l t  o f  f u l l y  f u n c t i o n a l  
computer- integrated manufactur ing (CIM) and computer-aided f a b r i c a t i o n  (CAF). 
Process design covers t h e  mon i to r ing  and feedback func t i ons  t o  assure t h a t  t h e  
process parameter t a r g e t s  a re  met and t h a t  process-induced de fec ts  a re  kept  i n  
c o n t r o l  . The SRC/Uni v e r s i  t y  o f  M i  c h i  gan Program i n  Automated Semiconductor 
Manufactur ing i s  us ing  r e a c t i v e  i o n  e tch ing  (RIE) as a process veh ic le  f o r  
examining key issues associated w i t h  automated sensing, con t ro l ,  and 
f a c i l i t i e s  i n t e g r a t i o n .  A dual-chamber SEMI-1000 R I E  i s  now i n s t a l l e d  and i s  
b e i n g  i n t e r f a c e d  w i t h  a lOMbs MAP ne twork  i n  M i c h i g a n ' s  new S o l i d - s t a t e  
Fabr i ca t i on  F a c i l i t y .  Th i s  network w i l l  be used i n  a p ro to type t e s t  bed f o r  
process automation, o f f e r i n g  a guaranteed response t ime, message 
p r i o r i t i z a t i o n ,  and a h i e r a r c h i c a l  f a c i l i t y  a rch i tec tu re .  Software d r i v e r s  
f o r  t h i s  network have now been developed as w e l l  as a network i n t e r f a c e  f o r  
t h e  SECS p ro toco l .  Companion work i n  advanced R I E  process model i n g  now a1 1 ows 
t h e  c a l c u l a t i o n  o f  two-dimensional m ic ros t ruc tu re  e t c h  topographies f o r  a 
v a r i e t y  o f  e t ch ing  parameters. These models w i l l  f a c i l i t a t e  the  automat ic 
f i ne - tun ing  of e tch  c h a r a c t e r i s t i c s  and process i n t e r p r e t a t i o n  v i a  an R I E  
exper t  system, a1 so under development. Work on mono1 i t h i  c i n teg ra ted  sensors 
f o r  pressure, gas f low,  and gas ana lys is  w i l l  p rov ide  add i t i ona l  data f o r  
equi pment c o n t r o l  . 
The cha l l enge  i s  t o  cont inue t o  r e f i n e  t h e  process by which the  i ndus t r y ,  
government, u n i v e r s i t i e s ,  and the  SRC s t a f f  c a r r y  out  semiconductor research 
t o  i n c r e a s e  t h e  e f f e c t i v e n e s s  o f  t h i s  team e f f o r t  and t o  p r o v i d e  a more 
p r o d u c t i v e  response t o  t h e  need f o r  a c o n t i n u i n g  f l o w  o f  new knowledge, 
c rea t  i v i  t y  , and i nnovat i on. 
8 
The Members Dollar 
SRC STRUCTURE 
9 
An Industry View of the Future 
Direction of Manufacturing Science 
(through 1995) 
Generated by the TAB Manufacturing Sciences Committee 
Industry Contributors 
Dr. R. C. Dehmel 
Dr. S. A. Abbes 
Dr. J. N. Arnold 
Dr. M. M. Beguwala 
Dr. R. M. Burger 
Dr. 4. L. Crowder 
Dr. H. Dixon 
Dr. S. V. JaskolSkl 
Mr. U. Kaempf 
Mr. G. Kern 
Dr. W. Lindemann 
Mr. S. A. Martin 
Dr. M .  E. Michael 
Dr. D. A. Peterman 
Dr. D. H. Phillips 
Mr. A.  P. Roberge 
Mr. J. L. Saltich 
Dr. C. Skinner 
Or. W. Snow 
Dr. P. W. Wallace 
Dr. 1. Weissman 
Mr. L. Welliver 
Mr. H. Wimplheimer 
Intel (Chairman) 
SRC. IBM 
AT&T Bell Labs 
Rockwell International 
SRC 
IBM 
Eaton 
Eaton 
HP Labs 
Monolithic Memories 
COC 
Harris Semiconductor 
Westinghouse 
Texas Instruments 
SRC 
Union Carbide 
Motorola 
National Semiconductor 
SEMI Chapter 
SAC 
Varian 
Honeywell 
IBM 
Future Directions of the 
Manufacturing Sciences Program 
1. Microelectronics CAMlCAF 
c 
Other Requiremenb 
Adaptive 
In Situ T I E  
control Optimize 
2. Process inspection and control 
- Measurementlanaiysis automation 
Machine vision 
3. Microelectronics Manufacturing Engineering 
- University - SRC Program 
10 
MAJOR TRENDS - SEMICONDUCTORS 
Submicron, MLM, CMOS drives 
manufacturing 
8 Inch Wafers - Now through 1990 
10 Inch Wafers - 1990 through 1995 
THE FUTURE = AUTOMATED I MANUFACTURING 
Sourcar Genus and SRC 
EQUIPMENT IMPLICATIONS 
Commodity ASIC 
Lowest yielded die cost Shortest manufacturing cycle 
Optimized, dedicated equipment Flexible, dedicated equipment 
High capacity, high utilization 
High operating reliability 
Machine automation, CAM 
Factory automation 
8 and 10 inch wafers 6 and 8 inch wafers 
Lower capacity, high availability 
High operating and standby rel. 
Machine automation, CAM 
Factory data base automation 
I AUTOMATED, ADAPTIVE I MANUFACTURING 
Sources: Genus end SAC 
11 
SEMICONDUCTOR EQUIPMENT 
BUSINESS 
580 companies worldwide (1985) 
072% USA 
19% Japan 
09% Europe 
Top 50 supply 72% of total sales 
Most are 1 product companies 
Average sales = $10.9 Mlyrfcompany 
Highly fragmented industry 
Source: VLSl Research Inc., and Genus 
Semiconductor C a p i t a l  Investment  P lans 
( U n i t  = $1 M i l l i o n )  
Company 
H i t a c h i  
Toshiba 
M i t s u b i s h i  E l e c t r i c  
NEC 
F u j i t s u  
Oki E l e c t r i c  
F u j i  E l e c t r i c  
Ma tsush i ta  
Sony 
Sanyo 
Tokyo Sanyo 
Sharp 
T o t a l  
I n i t i a l  
Investment  
450 
600 
350 
700 
500 
160 
65 
450 
200 
60 
230 
200 
3,965 
Percentage 
Change f rom 
Prev ious  Year 
0 
- 18.9 - 0.1 
0 
- 23.7 - 12.1 
- 11.0 
- 20.0 
127.9 
46.0 
14.3 
- 3.2 
- 
F i s c a l  1985 
Ac tua l  
Investment  
(Est imated)  
300 
500 
290 
600 
250 
125 
60 
300 
175 
6 1  
235 
180 
3,076 
Percentage 
Revi s i on 
f rom P lan  
-33.3 
-16.7 
-17.1 
-14.3 
-50.0 
-21.9 - 7.7 
-33.3 
-12.5 
1.7 
2.2 
-10.0 
Percentage 
Change f rom 
Prev ious  Year 
-33.7 
-32.4 
-17.3 
-14.3 
-61.8 
-31.3 
-17.8 
-45.0 
86.9 
49.2 
2.9 
- 
-22.4 -24.9 
Planned 
Investment  
N/A 
N/A  
225 
N/A  
N/A 
N/A 
35 
200 
175 
150 
N/A  
26.5 
- 
Percentage 
Change f rom 
Prev ious  Year 
Down 
Down 
Down 
Down 
Down 
-41.7 
-33.3 
0 
-56.6 
-36.2 
-22.4 
Level  
Down 
12 
Source: Nihon Kogyo Shimbunsha 
WORLDWIDE SALES 
FORECAST 
($ Millions) 
1979 - 1984 1989 CAGR -
10,500 16,500 37,100 13.5% Semiconductor ICsl 
Semiconductor Equipment2 1,417 6,306 8,082 18.9% 
Wafer Processing Equipment2 714 3,080 3,798 18.2% 
Deposition Equipment2 21 4 662 980 16.4% 
49 21 8 326 20.9% CVD Equipment2 
Sources: WonIgomery Securities. Jan. 1986 (lor years 1980, '85. -90) 
WLSI Research. Inc.. and Ganus 
1985 SEMICONDUCTOR EQUIPMENT SALES 
Japanese Consumption: $3.1 B European Consumption: $0.6B 
Europe 
U .S. Produced 
Japan 
/ U.3. 
Europe: 2.1% 
U.S. Consumption: $3.68 
89.8% U.S. Produced 
Europe: 3.0% Japan: 7.2% 
Source: VLSl Research. Inc 
13 
MAJOR TRENDS - 
SEMICONDUCTOR EQUIPMENT 
Device requirements drive equipment 
New technologies, materials 
In situ integration of manufacturing steps 
CAF and CAM = Automated adaptive 
Business shakeouts, consolidations 
- obsolescence of old 
manufacturing 
IC manufacturer, more involved in 
equipment technology developments 
Joint customerlsupplier ownership of 
performance in operating environment 
PROGRAMS 
University of California, Santa Barbara - GaAs HEMT 
Stanford University - Manufacturing 
University of Arizona - Packaging 
University of Florida - Submicron bipolar 
MCNC - Manufacturing 
Clemson University - Reliability 
RPI - In situ processing 
University of Illinois, Urbana-Champaign 
Re1 iable architect u res 
MIT - Advanced processing 
University of Michigan - Manufacturing automation 
14 
Manufacturing Sciences 
Principal Thrusts 
$5.13 M 
/ 
/ 
f WAFER 
5c 
*IO 
40 
Percent 
Of 
Total 
SCl.  
Funds 
Mlg. 3a 
20 
10 
t 
0 
\ 
\ 
FSUfFAMU 
THE SRClUNlVERSlTY OF MICHIGAN 
PROGRAM IN AUTOMATED SEMICONDUCTOR MANUFACTURING 
15 
Manufacturing Sciences 
Significant Accomplishments 
1. Stanford 
2. MCNC 
- Microcapillary Cooling Technique 
- Thermal Resistance of 0.04"C/Watt/cm2 
- Shallow Junctions Demonstrated; 0.1 5 Micron 
- Germanium Pre-amorphitization, 
Followed by Boron Implant Results in 
4x Hole Mobility 
- Developed 32 Element Thermal Imager 
Temp. Resolution Less Than 0.1"C 
Broad Spectral Range, 0.3 to 30 Microns 
Broad Dynamic Range 
3. Michigan 
- For In-Situ Non-Contact Monitoring 
- Interactive Electrical-Thermal Simulation 4. Arizona 
System 
2-0 Capacitance Calculator 
2-D Inductance Calculator 
5. Auburn - Demonstrated Hybrid Approach to Wafer 
Scale Integration 
6. Publications - 38 approvals into Technical Journals 
16 


Measurement science and manufacturing science research

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