The University of Illinois at Chicago program to develop an understanding of the basic mechanisms of deformation during the lubricated cutting of silicon is discussed. Also described is the development of a nondestructive measurement technique for residual stress in a silicon sheet

Danyluk, S.

English

NASA Technical Reports Server

;. ADVANCEDSILICONSHEET , '-!. N87-16411
_:, SURFACE PROPERTY MODIFICATION OF
_ SEMICONDUCTORS BY FLUID ABSORPTION o
_,,
UNIVERSITYOF ILLINOISAT CHICAGO
:: S. Danyluk
.t.
.,_ Objectives
. Lubricated Cutting (wafering)
laboratory simulation
mechanism
model
• . Residual Stresses in Sheet
Develop Interferometry Technique
Apply to EFG and h_B
Lubricated Cutting in Simulated Laboratory Experiments
Surface Morphology
Hardness
Load, Temperature, Fluids Wear rate
Depth of Damage
Mechanism
Model
J
J 307
_ .... m
1987006957-307
https://ntrs.nasa.gov/search.jsp?R=19870006978 2020-03-20T12:13:37+00:00Z
, ADVANCED SILICON SHEET
!
Silicon Wafer
. 4,
,O
_racks (propagate on
c 2"avage plane_)
plasticity(?) -_
.due to high compressive stresses
• a_ crack tips
• Simulate Damage
_iclng (OD sawing)
_nden_ation (Vicker_dia) i
Identlfy crltlcal parameters
"i
Load _i
fluid
/ temperature
o 0
bearable sta_e
1987006957-308

ORIGINALIz_.(_ "",.
OF POORQUALnY
310
1987006957-310
_i ADVANCE _"-1 D: SILICON SHEET
! Summary of High-Speed, Eleva*ed Cutting
(
jI-
t ( Cracks at Bottom of groove
Deformation Node
Plasticity
Fluids, Temperature--- influence _,trface morphology
.t
I _ V,¢ll,,,,, _,_al _,1_vmcd°l._ I /
/ \
_ _¢¢Le._ .'_
! i
?
o../>"---
I
311
t _
=
1987006957-311
i" ADVANCED SILICON SHEET
i 1 -" ; I ' f
." / • \ ', : .... , ....:...,
' _c /"- .'°"" "'t,, _\'\ ' '' '/ . .\,,
_'_ _ ,_E / \ _ • • t
| / _ \ \
, o, .\\
25 / ",o \ " '
,' ', \'\| o p(,,-cm) _ _'
o (100) p-_:)e _ \
• (lO0)n-type 0.016 ._ \
• 20 • 0.959 " \
• . Z5OO _ \ :
o r
• 3.347 _
; I , I m I
O 5O I00 [50 2O0 250 3O0
--o Tempotu_ ('C)
Figure 36, Damage size(2D) vs. indenlm_ion temperat, ure for
p-type and n-type Cz silicon. The indenCa¢ion
load was 0._gN. The n-type silicon had resisis-
¢iviCes of 0,016, 0.959, 2.5. and 3.3_,74_cm.
/
'L
t
1jo.,,_
, "°it,, ,o
I
|! ,
o,
d
"" 312
aL
1987006957-312
'" ADVANCED SILICON SHEET
;
i
Indentation Model
indenter 4
\ /
. ____..*ec,.*,e
_, - field)
(d--..ge)
[ 'D (1 Xll I '' low P sp'c" ch'l.efields infl_ence damage
eN - finite ntmber of surface states
s
"NI, Ess not known but extracted from expt.
eUe. electrochemical potentill ._
2D • f(NI).N s. Ess,13 .i
t
!
-h.
iio '
_:'C ' 313
1987006957-313
"P ADVANCED SILICON SHEET
:. Space ChargeLengthas a Functionof Temperature
6
" :_ I_4"+q +jr.,zl
c = N+=12
, "O + = Ns=I4
, -- ¢ : _S=£o
,__ • = Ns=18
4, = Ns---20
'+ .., .
'* _
g"=- /'
_ ./ :t
-i <'° / ,
!
'i _,. / /
Ii
.. _,=_ /' °.,:. / o/_o :i " //
O/:
ill / / / +/+'_"
/// ./ + ..;
o.o ]oo.o _oo.o aoo.o 400.0 soo.o eoo.o
temperature,g
i
!
314
®'
i
1987006957-314
t_tFJlell_q _ _,3"_-*_1_ .¢_" •_ "_'___._ _ _ _. _ "i
ADVANCED SILICON SHEET
Space Charge Lengthas a Function of Temperature
4
I¢.!
c = Nd=19 _: ]_ Iu
-- + = Nd=2l
x = Nd=22
= Nd=23
_,,, :o_ /\
- 1i-o
_e / •
b_'O -
q_
/
, /
/ /I /'
° ,,.,,,,oi "°
.2 _ _ -_'_ _ t
o.o ioo.o =oo.o 3oo.o 4o0.o soo.o 6oo.o
temperature. K
i
s !i
• 315
]987006957-3]5
t j
ADVANCED SILICON SHEET
Summary of Indentation Model
2D and x exhibit maximum at 150C
11
N = 1016°10lS/m 2
S
i
E = 0.79 eV
$
?
Doping level influences 2D
Predict T,N D variation with 2D
, Summary of Silicon Results
- . Wear rate
. Ethanol - highest
i
; . air ° lowest ..
• Damage
._oad _ plasticity, p 100-f
cracks, p 200gf
i
f
,temp
c:acks_ damage decreases
at T 2SOOC
• bulk doping
• fluid
1987006957-316
%'
p
:. ADVANCED SILICON SHEET
r •
Conclusions
,. Mechanisas of Wear
Wear rate and Jasage includes: cracks and _cLty
Laboratory simulation tests provide guidance in sodifying
industrial practices.
Wear rate Bay be optiai_ed and damage Bay be ain/=ized i '
,. Load (below 0.9aN (100fg) _ i
!_ Fluid (alcobol-based vs. water-bas.-d fluids) ,: ;
. Tap (200-300°C) _. ,
_k_del allows paraseters to be identified and range to be
extrapolated. I
Unresolved problems: Impact, fatigue
1
f,
L
!;
Residual Stresses
lnterferosetry is a premising NDT technique for sheet geometries
Edges - coupressive '1
Center- tensile !
EFG - Vgrow¢h • 2 ca/win - ORS= .+_l_a
WEB- V_h - ca/sin - oRS = tl NPa '_, i:
Lh-resolved problems: anisotro W of E, u : •
dendrite geoaetx7
I
f
/
,,P ..o
__- 317
1987006957-317


Surface property modification of semiconductors by fluid absorption

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