Real time thermal imaging of high temperature semiconductor melts

Abstract

A real time thermal imaging system with temperature resolution better than + or - 1 C and spatial resolution of better than 0.5 mm was developed and applied to the analysis of melt surface thermal field distributions in both Czochralski and liquid encapsulated Czochralski (LEC) growth configurations. The melt is viewed in near normal incidence by a high resolution charge coupled device camera to which is attached a very narrow bandpass filter. The resulting image is digitized and processed using a pipelined pixel processor operating at an effective 40 million operations per second thus permitting real time high frequency spatial and temporal filtering of the high temperature scene. A multi-pixel averaging algorithm was developed which permits localized, low noise sensing of temperature variations at any location in the hot zone as a function of time. This signial is used to implement initial elements of a feedforward growth control scheme which is aimed at reducing disturbances to the melt caused by the batch nature of the growth process. The effect of magnetic melt stabilization on radial melt temperature distributions was measured using this technique. Problems associated with residual internal reflections and non-optimized path geometry are discussed