Chemical compatibility of cartridge materials

Abstract

This twelve month progress report deals with the chemical compatibility of semiconductor crystals grown in zero gravity. Specifically, it studies the chemical compatibility between TZM, a molybdenum alloy containing titanium and zirconium, and WC 103, a titanium alloy containing Niobium and Hafnium, and Gallium arsenide (GaAs) and Cadmium Zinc Tellurite (CdZnTe). Due to the health hazards involved, three approaches were used to study the chemical compatibility between the semiconductor and cartridge materials: reaction retort, thermogravimetric analysis, and bulk cylindrical cartridge containers. A scanning electron microscope with an energy dispersive X-ray analyzer was used to examine all samples after testing. The first conclusion drawn is that reaction rates with TZM were not nearly as great as they were with WC 103. Second, the total reaction between GaAs and WC 103 was almost twice that with TZM. Therefore, even though WC 103 is easier to fabricate, at least half of the cartridge thickness will be degraded if contact is made with one of the semiconductor materials leading to a loss of strength properties