Monolithic diode frequency multiplier arrays, including barrier-N-N(+) (BNN) doubler, multi-quantum-barrier-varactor (MQBV) tripler, Schottky-quantum-barrier-varactor (SQBV) tripler, and resonant-tunneling-diode (RTD) tripler arrays, have been successfully fabricated with yields between 85 and 99 percent. Frequency doubling and/or tripling have been observed for all the arrays. Output powers of 2.4-2.6 W (eta = 10-18 percent) at 66 GHz with the BNN doubler and 3.8-10 W (eta = 1.7-4 percent) at 99 GHz with the SQBV tripler have been achieved

Chung, E.

Domier, C. W.

Liu, Hong-Xia L.

Luhmann, N. C., Jr.

Qin, X.-H.

Sjogren, L. B.

Wu, W.

English

NASA Technical Reports Server

Third International Symposium on Space Terahertz Technology Page 595
N 9 3 - 2ft5 7*7 5
MONOLITHIC MILLIMETER-WAVE DIODE GRID FREQUENCY
MULTIPLIER ARRAYS
Hong-Xia L. Liu, X-H. Qin, L. B. Sjogren, W. Wu, E. Chung,
C. W. Domier, N. C. Luhmann, Jr.,
Center for High Frequency Electronics
Department of Electrical Engineering
University of California
Los Angeles, California 90024-1594
ABSTRACT
Monolithic diode frequency multiplier arrays, including barrier-N-N+ (BNN) dou-
bler, multi-quantum-barrier-varactor (MQBV) tripler, Schottky-quantum-barrier-varactor
(SQBV) tripler, and resonant-tunneling-diode (RTD) tripler arrays, have been suc-
cessfully fabricated with yields between 85% and 99%. Frequency doubling and/or
tripling have been observed for all the arrays. Output powers of 2.4-2.6 W (?/=10-
18%) at 66 GHz with the BNN doubler and 3.8-10 W (»/=1.7-4%) at 99 GHz with
the SQBV tripler have been achieved.
INTRODUCTION
Quasi-optical spatial power combining techniques have, in recent years, been ex-
tensively investigated for millimeter and submillimeter power generation [1] [2] [3].
Our research efforts have been focused on monolithically integrating thousands of
solid state devices to generate Watt level harmonics in the millimeter region. In
addition to arrays of familiar devices such as the BNN and RTD, several new de-
vice concepts (MQBV and SQBV [4] [5]) have been developed in the course of this
work which promise to significantly improve the performance of frequency multipliers.
Arrays of all of these devices have been successfully fabricated and tested. Several
exciting results have been obtained. Improvements both in device design and in the
matching system are underway to further optimize array performance.
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Page 596 Third International Symposium on Space Terahertz Technology
FABRICATION AND RESULTS
(a) BNN frequency doubler array
A four-mask process based on the self-aligned aluminum Schottky diode process
employed by C. Zah [6] is utilized to fabricate the BNN doubler array. Figure 1
shows an individual BNN device after fabrication. The array was then mounted on a
quarter wavelength thick quartz plate. No bias is required due to the adjustment of
the build-in voltage resulting from the 8 doped layer (see Fig.2). The test system for
the BNN frequency doubler is shown in Fig.3 except that the output filter was not
used. Cutoff waveguides for the fundamental have been used to prevent contamination
of the detected signal due to the pump signal. A variety of tests were employed
to conclusively verify that the received signal was actually frequency doubled. All
waveguide components including attenuators have been calibrated using at least two
methods. The input and receiving horns have also been calibrated and compared
with the theoretical values. Figure 4 displays the measured RF results. An output
power of 2.4-2.6 W and a .maximum efficiency of 10-18% have been achieved. The
calculated cutoff frequency based on the measured low frequency parameters of this
array is 280 GHz, which results in a maximum theoretical conversion efficiency of
~20%.
Slim
0.6|i
Figure 1. The fabricated individual BNN diode.
t f f f f f f f f f t t f t t f f f i
Semi-insulating GaAs substrate
2000A Al
\ 200A GaAs undoped
50A n* GaAs 2x10 cm'
1200A n GaAs 6xlo"cni
n* GaAs 4x10 cm
Figure 2. The profile of the BNN diode.
Third International Symposium on Space Terahertz Technology Page 597
Tuning
Slobl
2.5
^
 2| 1.5
I l
6 0.5
Output Power- • - -o — Efficiency
12
0
•o
10
0
10 15 20 25 30
Input Power (W)
8 =Q.
Figure 3. The frequency multiplier setup. Figure 4. Measured frequency doubling output power
and efficiency at 66 GHz as the function of
the input power.
(b) Frequency tripler arrays
MQBV, SQBV and RTD arrays have been successfully fabricated using a back-
to-back processing method [7]. As a result, all these arrays are suitable for odd
harmonic generation due to the resulting symmetric C-V characteristics. Figure 5
displays the array layout. The period of each cell is 400 /zm. There are 2250 devices
on the MQBV array, 1300 devices on the SQBV array, and 500 devices on the RTD
array, respectively. These arrays are tested using the system shown in Fig. 3. Since
the input is identical for both the doubler and tripler arrays, the same input filter
and tuning slabs have been used. The output filter for the frequency tripler is ah
inductive metal grid array [8], and quartz tuning slabs with a thickness of a quarter
wavelength at the tripled output have been used for the output impedence matching.
Figure 6 shows the measured output power and efficiency of the SQBV array at an
output frequency of 99 GHz. An output power of 3.8-10 W and an efficiency of 1.7-4%
have been achieved. Due to excessive pumping in the initial tests, the performance of
the MQBV array was degraded significantly (fc dropped from 550 GHz to 100 GHz).
However, an output power of 0.1 W and an efficiency of 0.4% have been obtained for
the degraded array which is in good agreement with the theoretical prediction (0.5%).
Finally, a frequency tripling signal has also been observed with the RTD array. Tests
are underway to measure the output power and efficiency as the function of the input
power.
Page 598 Third International Symposium on Space Terahertz Technology
400 ion
4
3.5
__ 3
T 2.5to
i 2
§
O
1
0.5
0
-Output power (W) ---- Efficiency (%)
50 100 150 200 250 300
Input power (W)
Figure 5. The MQBV and SQBV arrays layout. Figure 6. Measured frequency tripling output power
and efficiency at 99 GHz as the function of
the input power.
CONCLUSIONS
BNN, MQBV, SQBV, and RTD frequency multiplier arrays have been successfully
fabricated with yields between 85 and 99%. All of these arrays have yielded frequency
multiplication. An output power of 2.4-2.6 W with maximum efficiency of 10-18%
has been achieved at 66 GHz with the BNN doubler array; an output power of 3.8-10
W with a maximum efficiency of 1.7-4% has been achieved at 99 GHz with the SQBV
array.
ACKNOWLEDGEMENTS
This work was supported by the US Army Research Office and the US Department
of Energy. The authors wish to thank Dr. J. Maserjian and P. Smith of Jet Proposion
Lab. for providing the processing facilities and the MBE wafers. The authors also
wish to acknowledge the generous assistance of Dr. R. Bhat and Dr. L. Florez
of Bellcore, Professor M. Spencer of Howard University, and Dr. A. Miura of the
Yokogawa Electric Corp. in providing MBE and MOCVD wafers for these studies.
Third International Symposium on Space Terahertz Technology Page 599
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Monolithic millimeter-wave diode grid frequency multiplier arrays

Monolithic millimeter-wave diode grid frequency multiplier arrays

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