The properties of a semiconductor get drastically modified when the crystal
point group symmetry is broken under an arbitrary strain. We investigate the
family of semiconductors consisting of GaAs, GaSb, InAs and InSb, considering
their electronic band structure and deformation potentials subject to various
strains based on hybrid density functional theory. Guided by these
first-principles results, we develop strain-compliant local pseudopotentials
for use in the empirical pseudopotential method (EPM). We demonstrate that the
newly proposed empirical pseudopotentials perform well close to band edges and
under anisotropic crystal deformations. Using EPM, we explore the heavy
hole-light hole mixing characteristics under different stress directions which
may be useful in manipulating their transport properties and optical selection
rules. The very low 5 Ry cutoff targeted in the generated pseudopotentials
paves the way for large-scale EPM-based electronic structure computations
involving these lattice mismatched constituents.Comment: 13 pages, 7 figure
