SiN x : Tb 3+-Yb 3+, an efficient down-conversion layer compatible with
silicon solar cell process Abstract Tb 3+-Yb 3+ co-doped SiN x down-conversion
layers compatible with silicon Photovoltaic Technology were prepared by
reactive magnetron co-sputtering. Efficient sensitization of Tb 3+ ions through
a SiN x host matrix and cooperative energy transfer between Tb 3+ and Yb 3+
ions were evidenced as driving mechanisms of the down-conversion process. In
this paper, the film composition and microstructure are investigated alongside
their optical properties, with the aim of maximizing the rare earth ions
incorporation and emission efficiency. An optimized layer achieving the highest
Yb 3+ emission intensity was obtained by reactive magnetron co-sputtering in a
nitride rich atmosphere for 1.2 W/cm2 and 0.15 W/cm2 power density
applied on the Tb and Yb targets, respectively. It was determined that
depositing at 200 {\textdegree}C and annealing at 850 {\textdegree}C leads to
comparable Yb 3+ emission intensity than depositing at 500 {\textdegree}C and
annealing at 600 {\textdegree}C, which is promising for applications toward
silicon solar cells.Comment: Solar Energy Materials and Solar Cells, Elsevier, 201