We report on the growth of stoichiometric Sr2IrO4 single crystals,
which allow us to unveil their intrinsic magnetic properties. The effect of
different growth conditions has been investigated for crystals grown by the
flux method. We find that the magnetic response depends very sensitively on the
details of the growth conditions. We assess the defect concentration based on
magnetization, X-ray diffraction, Raman scattering, and optical conductivity
measurements. We find that samples with a low concentration of electronically
active defects show much reduced in-gap spectral weight in the optical
conductivity and a pronounced two-magnon peak in the Raman scattering spectrum.
A prolonged exposure at high temperature during the growth leads to higher
defect concentration likely due to creation of oxygen vacancies. We further
demonstrate a systematic intergrowth of Sr2IrO4 and Sr3Ir2O7
phases by varying the growth temperature. Our results thus emphasize that
revealing the intrinsic magnetic properties of Sr2IrO4 and related
materials requires a scrupulous control of the crystal growth process