A four-point characterization method is developed for semiconductor samples that have either capacitive or ohmic contacts. When capacitive contacts are used, capacitive current- and voltage-dividers result in a capacitive scaling factor which is not present in four-point measurements with only ohmic contacts. Both lock-in amplifier and pre-amplifier are used to measure low-noise response over a wide frequency range from 1 Hz -- 100 kHz. From a circuit equivalent of the complete measurement system after carefully being modeled, both the measurement frequency band and capacitive scaling factor can be determined for various four-point characterization configurations. This technique is first demonstrated with a discrete element four-point test device and then with a capacitively and ohmically contacted Hall bar sample using lock-in measurement techniques. In all cases, data fit well to a circuit simulation of the entire measurement system over the whole frequency range of interest, and best results are achieved with large area capacitive contacts and a high input-impedance preamplifier stage. Results of samples (substrates grown by Max Bichler Dieter Schuh, and Frank Fischer of the WSI) measured in the QHE regime in magnetic fields up to 15 T at temperatures down to 1.5 K will also be shown
