This thesis presents the design and experimental results of a 7.3GHz notch image reject filter, combined with a 5.8GHz low-noise amplifier (LNA), for integrated heterodyne receiver front-ends. A new image reject filter implementation is proposed. Q-enhancement circuitry for on-chip inductors are used to optimize the depth of image rejection. Experimental results show that more than 62dB of image rejection at 7.3GHz can be obtained in a standard CMOS 0.18mum technology, while operating from a 1.8V supply. The LNA exhibits a gain of 15.8dB and an IIP3 of -5.3dBm while consuming 9mW of power. With maximum image rejection, the LNA-notch combination circuit achieves a 4.1dB noise figure at 5.8GHz. The proposed notch filter alone can operate from a 1V supply voltage. It is shown analytically how circuit stability can be ensured.The implementation of new robust and stable high-Q CMOS image reject filters, which enables the realization of fully integrated heterodyne 5GHz RF receivers is also presented. A cascade of two notch filters with their image reject frequencies slightly offsetted is proposed, in order to obtain a wide image rejection bandwidth, without having to resort to the overhead of automatic tuning circuitry. Thus, power consumption, area, and complexity are significantly reduced. Experimental results show that more than 30d$ of image rejection can be obtained in a standard 0.18mum CMOS technology, over a 400MHz bandwidth centered at 7.4GHz
