Rutherford backscattering analysis of gallium implanted 316 stainless steel

Abstract

Due to the character of the original source materials and the nature of batch digitization, quality control issues may be present in this document. Please report any quality issues you encounter to [email protected], referencing the URI of the item.Includes bibliographical references (leaves 35-36).Issued also on microfiche from Lange Micrographics.Ion implantation of Ga ions into 316 stainless steel was performed at fluences ranging from 8x10¹⁶ to 10¹⁸ ions/cm². The depth profile of Ga in the steel was analyzed via Rutherford Backscattering and ToFSIMS. The surface effects were characterized with SEM analysis. Results indicate that Ga saturation was reached at fluences between 2-6x10¹⁷ ions/cm². The maximum Ga concentration occurred near the surface and was between 20 and 25 atomic percent. A constant Ga concentration of 5% was attained at 300 [] and deeper. The possible enhanced diffusion of Ga was observed, but not necessarily through the grain boundaries. Although there was no indication of compound formation, significant pitting was observed at high fluences. Repassivation characteristics of stainless steel may be inhibited at high fluences; therefore future studies are recommended