Stress distributions in the strained InGaAs PMOSFET with source/drain (S/D) stressors for various
lengths and widths were studied with 3D stress simulations. The resulting mobility improvement was
analyzed. Compressive stress along the transport direction was found to dominate the hole mobility
improvement for the wide width devices. Stress along the vertical direction perpendicular to the gate
oxide was found to affect the mobility the least, while stress along the width direction enhanced in
the middle wide width region. The impact of channel width and length on performance improvements
such as the mobility gain was analyzed using the Kubo-Greenwood formalism accounting for nonpolar
hole-phonon scattering (acoustic and optical), surface roughness scattering, polar phonon
scattering, alloy scattering and remote phonon scattering. The novelty of this paper is studying the
impact of channel width and length on the performance of InGaAs PMOSFET such as mobility and
exploring physical insight for scaling the future III–V CMOS devices
