平面顯示器在追求輕薄短小、低電壓消耗、高亮度、高畫素等特性外，影像的清晰度將會直接影響使用者的舒適感，利用表面做抗反射來降低光線在顯示器之玻璃或塑膠基材之反射而形成許多炫光、鬼影，提升影像品質是未來高品質顯示器畫質不可或缺的組件。
本研究採用RF反應磁控濺鍍沉積氧化鋯，應用於多層抗反射膜層中之拓寬層，以改變氧氬流量比、射頻功率與工作壓力，來探討薄膜的光學性質與微結構，再藉由研究結果提供給膜層設計者得到最佳抗反射率。在改變參數下，薄膜均以單斜晶（ 11）優選方向之等軸晶結構所構成，近紫外光230 nm有明顯吸收曲線；在改變氧氬流量比研究發現，氧氬流量比0.8於可見光區有最高光穿透率95%，且比一般抗反射所要求光損失還低兩個數量級（k值為10-7），同時由AES與EDS結果得知氧氬流量比0.8是最接近化學計量比；在射頻功率方面，發現氧化鋯的生成熱是促進晶粒聚結成長而有良好的結晶性的主要驅動力，隨著功率增加，光穿透率也隨之提升；在工作壓力方面，發現在高工作壓力下，薄膜以較纖細之波浪狀結構來提升薄膜緻密度，使得折射率增加至2.02，也降低表面粗糙度。In recent years Flat Panel Display(FPD)has been improved to have the characteristics of light weight, small volume, low power consumption, high brightness and high pixel. With improving FPD's resolution it becomes more attractive to the customer. It is an indispensable component that anti-reflection films coating on the surface of glass or plastic substrates improve the quality of the high-definition FPD. Zirconium oxide is by far the most common material used in anti-reflection films. In this study, ZrO2-x thin films have been prepared by radio frequency magnetron sputtering with changing processing parameters, including O2/Ar ratios, applied power and working pressure. Optical system engineers utilize the results to gain optimum anti-reflection conditions.
In the aspect of O2/Ar ratios, scanning electron microscopy reveals that the films have smooth surface and dense microstructure, instead of columnar structure. Maximum roughness (Ra=2.89 nm) is present in the films deposited at O2/Ar ratio 0.8, measured by atomic force microscopy. Grazing angle incidence X-ray diffraction indicates that all the ZrO2-x films have monoclinic structure and exhibit ( 11) preferred orientations. Transmission electron microscopy reveals that the ZrO2-x films have equiaxed microstructure and the grain decreases with increasing the O2/Ar ratio. At the same time, the stoichiometry measured by energy-dispersive spectroscopy and auger electron spectroscopy approaches Zr/O ratio 2 at O2/Ar ratio 0.8. From the UV/Vis spectrophotometry and ellipsometry, it is obtained that optimum optical properties with high transmittance about 95% and low extinction coefficient 10-7 in the visible regime appear in the film deposited at O2/Ar ratio 0.8. By increasing the O2/Ar ratios from 0.2 to 3, the refractive index of the films decreases from 2.02 to 1.85.
In the aspect of RF powers, we find that the heat of formation in itself contributes to make the grain coalescence and have the excellent crystallinity. The increase in transmittance from 90% to 95% may be caused by increasing the powers from 75 W to 200 W. Finally, the results show that ZrO2-x films are transformed with the tiny wave-like microstructure by increasing working pressure. By increasing working pressure from 2.5 mtorr to 10 mtorr, the density and the refractive index increases from 0.86 to 0.92 and from 1.9 to 2.02, respectively.中文摘要----------------------------------------------------------------------------------------Ⅰ
英文摘要----------------------------------------------------------------------------------------Ⅱ
總目錄-------------------------------------------------------------------------------------------Ⅳ
圖目錄-------------------------------------------------------------------------------------------Ⅶ
表目錄-------------------------------------------------------------------------------------------XI
第一章 緒論
1-1 前言------------------------------------------------------------------------------------1
1-2 研究目的------------------------------------------------------------------------------2
第二章 理論基礎與文獻回顧
2-1 反應射頻磁控濺鍍原理
2-1-1 電漿理論---------------------------------------------------------------------7
2-1-2 射頻濺鍍---------------------------------------------------------------------9
2-2 薄膜沉積機制--------------------------------------------------------------------11
2-3 濺鍍薄膜微結構分佈模型-------------------------------------------------------14
2-4 光學理論
2-4-1 單介面與單層膜之反射與穿透-----------------------------------------16
2-4-2 透明薄膜之光干涉現象--------------------------------------------------18
2-4-3 透明薄膜光學性質--------------------------------------------------------18
2-4-4 抗反射薄膜設計-----------------------------------------------------------19
2-5 氧化鋯基本性質
2-5-1 氧化鋯的性質與結構-----------------------------------------------------21
2-5-2 氧化鋯薄膜目前研究及應用--------------------------------------------21
第三章 實驗方法與步驟
3-1 實驗規劃與實驗流程-------------------------------------------------------------30
3-2 實驗材料與基材前處理----------------------------------------------------------32
3-3 濺鍍系統與薄膜製備
3-3-1 薄膜濺鍍系統簡介--------------------------------------------------------33
3-3-2 氧化鋯薄膜製備-----------------------------------------------------------34
3-4 薄膜性質分析與量測
3-4-1 薄膜穿透率量測-----------------------------------------------------------35
3-4-2 折射率量測-----------------------------------------------------------------35
3-4-3 薄膜表面形貌與膜厚量測-----------------------------------------------35
3-4-4 薄膜結晶結構分析--------------------------------------------------------36
3-4-5 表面粗糙度量測-----------------------------------------------------------36
3-4-6 薄膜微結構分析-----------------------------------------------------------36
3-4-7 定性與定量化學成分分析-----------------------------------------------37
第四章 結果與討論
4-1 氧流量對薄膜性質之影響
4-1-1 薄膜表面形貌、沉積速率及粗糙度探討------------------------------41
4-1-2 薄膜結晶結構及顯微結構探討-----------------------------------------44
4-1-3 薄膜成分與化學計量分析探討-----------------------------------------47
4-1-4 薄膜光學性質探討--------------------------------------------------------48
4-1-5 改變氧流量之結果-------------------------------------------------------50
4-2 射頻功率對薄膜性質之影響
4-2-1 薄膜表面形貌、沉積速率及粗糙度探討------------------------------52
4-2-2 薄膜結晶結構及顯微結構探討-----------------------------------------53
4-2-3 薄膜光學性質探討--------------------------------------------------------54
4-2-4 改變射頻功率之結果-----------------------------------------------------55
4-3 工作壓力對薄膜性質之影響
4-3-1 薄膜表面形貌、沉積速率及粗糙度探討------------------------------57
4-3-2 薄膜結晶結構及顯微結構探討-----------------------------------------58
4-3-3 薄膜光學性質探討--------------------------------------------------------60
4-3-4 改變工作壓力之結果-----------------------------------------------------60
第五章 結論-----------------------------------------------------------------------------------92
參考文獻----------------------------------------------------------------------------------------9
