利用超高真空化学气相淀积(uHV/CVd)系统,在不同的温度、环境氛围及脱O过程参与等条件下对全息法制备的二维周期图形SI衬底进行退火,通过原子力显微镜(AfM)进行表征与分析,研究真空高温脱O过程对图形衬底表面形态变化的影响。结果表明,真空环境使衬底表面的SI原子可以自由运动,脱O过程增强了SI原子在表面的迁移,温度会影响SI原子的扩散速率,3个因素的共同作用导致图形深度变浅,侧壁坡度变缓。此外,在周期图形台面的边缘,观察到环形有序分布的纳米SI岛。2D-period patterned Si substrate is annealed in ultra-high vacuum chemical vapor deposition(UHV/CVD)under variational conditions including different temperature,environment,thermal decomposition of native silicon oxide.The morphology properties of annealed patterned-substrate are obtained by atomic force microscopy(AFM).The effect of annealing parameters on shape transformation of Si patterned-substrate is studied.The results indicate that the Si atoms can diffuse freely on substrate surface in vacuum and the diffusion is enhanced during thermal decomposition of native oxide.The diffusion velocity is affected by temperature.These effects result in the decrease of the depth of pattern and gradient of side wall.In addition,ordered nanometer Si islands are formed on the mesa of patterned-substrate.国家自然科学基金资助项目(60336010;60676027);国家重点基础研究发展计划“973”资助项目(2007CB613404
