在低激发动率密度条件下研究了混晶材料gAAS1-XPX：n（X＝0.88）中的nnI对束缚激子发光.发现随温度升高，在光致发光谱中依次出现nn3和nn1发光带，同时nX带明显热猝灭.在低温下，降低激发功率密度，nX谱带移向低能端并且窄化.结果表明，在低激发功率密度下，热激活的nX→nnI激子转移过程明显加强，激子转移的机制主要是变程跳跃过程.Abstract The NNi(i=1,3)emission in GaAs1-xPx:N with somewhat low composition x =0.88 under low excitation power density is observed For the First time.As temperature is raised, the NN3 and NN1 appear successively in CW spectrum,while the N.band quenches thermally.At low temperature,the narrowing and shiFt to lower energy of Nx band with decreasing of excitation power density are also observed.It is shown that the thermally activated Nx→NNi exciton transFer proceeds eFFiciently,and variable-range hopping mechanism is mainly responsible For transFer.国家自然科学基
