通过X光衍射图分析，确认了较低温度下CVd法生长的非掺杂SnO2晶膜含有较多的偏离SnO2配位的晶体成份，从而定性地解释了该晶膜具有较高的气体敏感度的现象。Through analysing X-ray diFFraction patterns, it is conFirmed that more crystal compositions deviating From SnO2 coordination are contained in undoped SnO2 Film CVD-grown at lower temperature.So it is explained that this Film has higher gas sensitivity.国家与福建省自然科学基
