采用皮秒量级的超快速光谱技术，分析了混晶gAAS1-XPX∶n材料发光瞬态过程.结果证实了材料随组份变化，从间接带到直接带（XC＝0.45k，77k）转变的带增强效应.对nX发光带不同能量位置的发光衰退测量还表明nX带同时存在着快速的带内隧穿转移和较慢的发光衰退过程The pico second ultraFast spectroscopic technology is used to study the tenary GaAs 1-x P x∶ N alloys.The results conFirm the band structure enhancement eFFect in GaAs 1-x P x∶ N alloys.The PL decay measurements of N X band show that the Fast intraband tunneling and slow luminescent decay coexist in GaAs 1-x P x∶ N alloys.国家和福建省自然科学基金;中山大学超快速激光光谱学国家重点实验室资
