提出适用于可见光全波段的光伏测算gAAS单晶表面复合速度的新方法.实验结果表明，对于掺SI的n型弱简并gAAS单晶（n0＝2.0x1017CM-3），其表面复合速度SP＝1.6x105CM·S-1，与有关报道基本一致.Based on the surFace photovoltaic measurement, a new method applicable to Full wave band of the visible light at various temperatures is proposed For determination of the surFace recombination velocity of the N type GaAs single crystal.It is maniFested by the experiment that the surFace recombination velocity of the weak degenerated GaAs single crystal doped silicon ( n 0=2.0×10 17 cm -3 )is 1.6×10 5 cm·s -1 , which is essentially consistant with related reports.福建省自然科学基
