采用低温光伏谱方法，研究了应变In018gA082/gAAS单量子阱结构中各子能级之间的光跃迁，并与理论计算的结果进行比较，对光伏谱的谱峰跃迁能量随温度变化的分析，表明量子阱中的应变与温度基本无关.研究了光伏谱的谱峰半高宽度随温度的变化关系.讨论了声子关联、混晶组分起伏及生长界面不平整对光伏谱谱峰宽度的影响Abstract The low temperature photovoltaic (PV) spectroscopy was used to study the optical transitions between subbands of strained In 0 18 Ga 0 82 As/GaAs quantum well,experimental results are well consistent with that of theoritical calculation.The dependence of PV peak transition energy on temperature has been analysed and the strain Factor and conduction band ofFset Q c For quantum well have been Found to be almost independent of temperature.The Full width at halF maxium (HWHM) of transition peaks as a Function of temperature has been studied.From a good Fit,we discuss the inFluences of the exciton phonon coupling,alloy disorder and interFace roughness on the line shape.国家自然科学基金;福建省自然科学基
