Research of silicon-based monolithic integrated optical receiver for Pof communication

Abstract

设计并用低成本的0.5μM bCd(bIPlOr,CMOS And dMOS)工艺实现了用于650nM塑料光纤(POf)通信的SI基单片集成光接收芯片,其中包含了与标准工艺兼容的大面积的叉指状的PIn结构的光电探测器(Pd)、跨阻放大器(TIA)以及后端放大器(PA)。采用nI公司的图形化编程软件lAbVIEW和硬件PXI并结合光学调整平台的测试方案对流片后的光接收芯片进行测试,结果表明,Pd的暗电流为PA量级,响应度为0.25A/W,电容为4.4Pf;对650nM的入射光,在180MbIT/S速率的伪随机二进制序列(PrbS)以及小于10-9的误码率(bEr)条件下,测得光接收芯片的灵敏度为-14.6dbM,并能得到清晰的眼图,包括200μMx200μM的Pd在内总的芯片面积0.9MM2,5V的电源下功耗为60MW。This paper describes a silicon-based monolithic integrated optical receiver for 650nm plastic optical fiber(Pof)communication realized in 0.5μm biplor,CMOS and DMOS(BCD)process.It consists of large area cross finger-type PIN photodetector(PD)that is compatible with standard process,transimpedance amplifier and post amplifiers.Testing scheme with the graphical programming software LabVIEW,hardware PXI and optical adjustment platform is proposed to test the optical receiver chip after tap-out.Measurement results show that the dark current of PD is at pA magnitude,the responsivity is 0.25A/W and the capacitance is 4.4pF.The sensitivity of receiver is-14.6dBm at 180Mbit/s pseudo random binary sequence(PRBS)and BERis less than 10-9 for 650nm input light.A clear eye diagram is demonstrated.The area of optical receiver is 0.9mm2 including the PD area of 200μm×200μm,and the power dissipation is 60mW with power supply of 5V.国家自然科学基金(61205060); 福建省自然科学基金(2011J01361); 中国福建省科技计划重点项目(2013H0047)资助项

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