采用金属有机物气相外延(MOVPE)技术在C面蓝宝石衬底上,引入脉冲原子层外延技术,制备了一系列表面平整度较高的高Al组分AlgAn基异质结构外延片.并采用电子束金属蒸镀技术及优化热退火方法,获得了良好的欧姆接触电极,进一步将外延片制备成lEd管芯.通过对量子结构有源层量子阱混晶组分的设计和调整,掌握并实现了主波长260~330nM紫外lEd结构材料的制备.High Al content AlGaN-based ultraviolet light-emitting diode(LED) structures were grown on sapphire substrate by metal organic vapor-phase epitaxy(MOVPE).The pulsed atomic layer epitaxy technology was adopted to improve the crystal quality.Ohmic contacts for the LED devices were obtained by optimizing the annealing conditions.The UV-LEDs with different wavelength(from 260 nm to 330 nm) were achieved by tuning the Al content.国家自然科学基金项目(60827004;90921002);国家重点基础研究发展计划(973)项目(2011CB301905
