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Asymmetric light reflectance effect of AAO and preparation of Si, Ge nanostructures using AAO template

Abstract

随着硅微电子产业的迅速发展,器件工艺水平不断提高,器件的尺度减小到纳米量级。然而,体Si是间接带隙材料,发光效率不高,制约了光电子集成的发展。制备高密度、小尺寸和大小均匀的Si基纳米结构对实现高性能的光电子器件具有重要的科学意义和应用价值。多孔阳极氧化铝膜(AAO)具有高度有序、孔径和孔间距可控、热稳定性好、绝缘、制备工艺简单等优点而成为制备均匀纳米结构的首选模板。 AAO是一种宽带隙材料,具有良好的光学特性,在近紫外至近红外波段具有很高的透光性。利用AAO模板在透明的玻璃衬底上制备的不同纳米结构可应用于光催化、光染料电池和光电极等。因此,对玻璃基AAO的制备和光学性质研究也有着重要的意义。...With the rapid development of silicon microelectronics industry, the device technology has improved and size scale is reduced to nanometer scale. However, the low luminous efficiency has restricted the development of optoelectronic integration due to its indirect bandgap. High density, small size and uniform Si nano structures are promising materials to achieve high performance Si-based photonic d...学位:理学硕士院系专业:物理与机电工程学院物理学系_凝聚态物理学号:1982008115299

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