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A Basic Study of MEMS Full High-temperature Touch Mode Capacitive Pressure Sensor Based on SiC-AlN Double-notches Structure

Abstract

硅压力传感器受其自身材料限制,在高于120℃环境中性能开始恶化,在500℃环境中将产生塑性变形导致完全失效,已经不能满足石油化工、汽车电子、航空航天、国防军工等领域对高温环境压力测量的需求。因此,研究新型的耐高温压力传感器成为了当前和今后一段时间高温极端环境压力测量最迫切需要解决的前沿课题。 为了实现高温环境中压力的高精度测量,本论文设计了一种基于碳化硅-氮化铝的全高温双凹槽接触式电容压力传感器(Double-notchesTouchModeCapacitivePressureSensor,DTMCPS)。碳化硅和氮化铝作为性能优越的第三代宽带隙半导体材料,具有耐高温、高频、大功率和抗辐射等...Silicon pressure sensors will worsen in higher than 120℃ environment and result in the plastic deformation in 500℃ environment due to its low material performance. Therefore, for pressure measurement in high-temperature extreme environment, such as petrochemical industry, automobile electronics, aerospace and military industrial etc., the new type of high-temperature pressure sensor is the most pr...学位:工学博士院系专业:物理与机电工程学院机电工程系_测试计量技术及仪器学号:1992006015318

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