本文采用CVD方法在硅单晶上制各SnO2薄膜，对不同制备条件：不同硅衬底温度及不同SnCl4溶液浓度下制备SnO2/Si,对其光伏特性进行测量，的出最佳制备条件。由于SnO2的禁带宽度大大于Si的禁带宽度，在可见光及近红外区内，SnO2层是透明的；SnO2层是一导电层，因此对SnO2/Si可认是类似于金属与半导体接触。采用金属半导体接触模型，在小讯号稳定光照和一定的边界条件下，解少子连续性方程，的出光生载流子浓度分布和光电压的计算公式。由等光强（等光子数）下测量的光电压值计算出少子扩散长度；由曲线拟合的出硅的介面复合速度和异质结的势垒宽度等参数，并对拟合结果进行讨论。对SnO2薄膜进行电镜扫描...In this paper, tim oxide films are deposited by CVD method on single crystal silcon. The effect of different deposition parameters, such as different substrate temperatures and SnCl4 solutions, on the photovoltaic properties are studied. For the energy gap of SnO2 is much higher than that of silicon, tin oxide layer is transparent in the unsible and near infrared ranges and photo excitation mainly...学位：理学硕士院系专业：物理与机电工程学院物理学系_半导体物理与器件学号：1990320
