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Investigation of transparent Al-doped ZnO films for high performance GaN-based light emitting diodes

Abstract

多晶的或无定形的透明导电氧化物(Transparentconductingoxides,简称TCOs),由于其独特的光学和电学性能,成为近年来研究的热点。其中,铝掺杂氧化锌(Al-dopedZnO,简称AZO)因具有低电阻率和高可见光区透过率,成为主要的透明导电氧化物材料之一,加上其原材料丰富,价格低廉且无污染,在光电器件领域有望替代ITO成为最理想的透明导电材料。本文采用射频磁控溅射技术首次在室温下,以ZnO:Al2O3(98:2wt%)为靶材,在石英玻璃衬底上制备多晶AZO透明导电薄膜。同时应用X射线衍射仪(XRD)、原子力显微镜(AFM)、扫面电子显微镜(SEM)、俄歇电子能谱仪(AES...Recently, a great deal of interest has been fueled in the development of polycrystalline or amorphous transparent conducting oxide (TCO) semiconductors used for practical thin-film transparent electrode applications, due to their excellent electrical and optical properties. Aluminum-doped zinc oxide (AZO) thin films, which are the most important TCO, with low resistivity and high transparency in v...学位:理学博士院系专业:物理与机电工程学院物理学系_凝聚态物理学号:1812005140302

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