GaN基宽禁带半导体材料具有优异的物理和化学性质，已被广泛用于全彩显示、信息指示和照明领域，成为当今半导体技术发展的热点。目前，GaN及GaN基器件的研究已经取得了巨大的进展，但是GaN的生长和器件制备方面还存在一些困难。p型掺杂困难是限制GaN基材料和器件发展的主要因素之一。热退火是用于提高p型GaN空穴浓度的常用方法，但具体的实验条件还有待进一步优化。本文针对GaN基材料的p型掺杂问题，将GaN基LED样品分别在800℃，N2氛围下退火20min和500℃，O2氛围下退火6min，并对N2退火和O2退火的发光二极管（LED）样品进行光学性能和电学性能的系统研究与分析，基于这些研究本文的主要...GaN-based wide-band gap semiconductors are being widely used in color display, signal indication and solid-state lighting due to their outstanding physical and chemical properties. It is now a hot topic in semiconductor research. Although great progresses have been made in the studies of GaN-based devices, several obstacles still act as the critical handicaps restricting the further development an...学位：工学硕士院系专业：物理与机电工程学院_微电子学与固体电子学学号：1982010115284
