We have epitaxially grown Si/beta-FeSi2/Si (SFS) structures with beta-FeSi2 particles or beta FeSi2 continuous films on Si substrates by molecular beam epitaxy (MBE), and observed a 1.6 mu m electroluminescence (EL) at room temperature (RT). The EL intensity increases with increasing the number of beta-FeSi2 layers. The origin of the luminescence was discussed using time-resolved photoluminescence (PL) measurements. It was found that the luminescence originated from two sources, one with a short decay time (tau similar to 10 ns) and the other with a long decay time (tau similar to 100 ns). The short decay time was due to carrier recombination in beta FeSi2, whereas the long decay time was due presumably to a defect-related DI line in Si
