Si/beta-FeSi2 particles/Si(001) and Si/beta-FeSi2 film/Si(111) structures were grown by reactive deposition epitaxy (RDE) and by molecular beam epitaxy (MBE), and time-resolved photoluminescence (PL) was measured from 8 K to 150 K. Both samples exhibited the same PL peak wavelength of 1.54 mum at low temperatures, but the PL decay time of 1.54 mum emission was different, showing that the luminescence originated from different sources. A short decay time (tau similar to 10 ns) was found to be dominant for the Si/beta-FeSi2 particles/Si(001) at low temperatures. In contrast, the decay curve of the Si/beta-FeSi2 film/Si(111) was well fitted by assuming a two-component model, with a short decay time (tau similar to 10 ns) and a long decay time (tau similar to 100 ns)
