用电结晶法制取了〔Ｃｏ（２．５ｎｍ）／Ｐｔ（２．５ｎｍ）〕ｎ（ｎ＝５０）超晶格．通过控制过电位以控制多层膜的生长．应用了具有高空间实分解能的反射电子显微镜法（ＲＥＭ）直接观察Ｐｔ（Ⅲ）面上的原子台阶以及在Ｐｔ（Ⅲ）上的Ｃｏ的生长方式，发现在高过电位Ｅ＝－１．１５Ｖ（ｖｓ．Ｈｇ／Ｈｇ２ＳＯ４）下Ｃｏ以三维生长方式成膜．用小角度Ｘ射线衍射法证实在Ｐｔ（Ⅲ）面上确实形成了人工超晶格，其周期ｄ＝５ｎｍ．The electrocrystallization of Co(2.5 nm)/Pt(2.5 nm) n (n ≥50) multilayer has been carried out under potential control, based on observation of reflection electron microscopy (REM). Monatomic steps on Pt single crystal surfaces have been imaged using a conventional transmission electron microscope in the reflection made. The REM images have revealed three dimintional growth of Co electrocrystallization at high polarization of -1.15 V (vs.Hg/Hg 2SO 4). The structure of the specimen was examined by small or high angle X ray diffration technique. The modulation period of a multilayered structure is 5.0 nm.作者联系地址：上海大学化学系电化学研究室,安徽工学院,中国科学院固体物理研究所,中国科学院上海冶金研究所Author's Address: The Electrochem. Rcs. Center, Shanghai Univ., Shanghai 201800 Zhou Tianjian Qin Yong Anhui Inst. of Techn., Hefei 230069Inst. of Solid State Phys., Acad. Sinica, Hef
