采用约束刻蚀剂层技术（ＣＥＬＴ）有可能实现纳米级的超微加工目的￣［１，２］。约束刻蚀层形成的方法之一是：通过电化学反应在模板表面上产生刻蚀剂，其在向外扩散过程中即与其它未有刻蚀作用的溶液组分发生快速均相化学反应，从而使刻蚀剂失去活性，刻蚀剂的扩散层厚度可约束在紧靠模板的范围内。而ＣＥＬＴ技术则取决于产生能对特定材料具有高度腐蚀性的腐蚀剂和具有合理的清除反应体系；象强氧化剂溴，邻菲绕啉铁（Ⅲ）和过氧化氢等均可作为刻蚀剂，Ｂａｒｄｅｔａｌ￣［３］等研究者借助扫描电化学显微镜（ＳＥＣＭ）通过电化学产生的溴和邻菲绕啉铁（Ⅲ）直接来刻蚀进行微加工，但未采用约束刻蚀层技术，所刻的线条较宽。本文研究溴和邻菲绕啉铁（Ⅲ）的均相捕捉反应速率常数，为利用约束刻蚀层技术进行微加工打下必要的基础。The mechanisms of the arsenite acid scavenging bromine and[Fe(Phen_3)]￣(3+)reaction were studied by the electrochemical methods. The arsenite acid scavenging bromine and[Fe(Phen_3)]￣(3+) reaction rate constants in sulfuric acid in the range of 23℃ to 69℃ and in the range of19℃ to 69℃ were determined by measuring the steady state limiting current,respectively.Theactivation energy of the arsenite acid scavenging bromine reaction in sulfuric acid is 33 kJ·mol￣(-1).作者联系地址：厦门大学化学系，固体表面物理化学国家重点实验室Author's Address: State Key Laboratory Physical Chemistry of Solid Surface,Chemistry Department,Xiamen University,Xiamen 36100
