以KOH作沉淀剂制备掺杂Al(Ⅲ)的Co3O4粉体.X射线衍射显示,掺Al的Co3O4不改变其晶型结构.循环伏安、恒流充放电等测试表明,化学掺Al后的Co3O4电极,其比容量提高,当Co(Ⅱ)与Al(Ⅲ)的摩尔比为1∶0.05时,在0~400 mV的电位区间内,5 mA/cm2电流密度下,单电极放电比容量可达518.07 F/g.With KOH as precipitator to prepare Aluminum doped Co3O4,X-ray diffraction indicated that the doping Al did not change the crystal structure of Co3O4.Electrochemical properties of the sample were tested by cyclic voltammetry and constant-current charge/discharge.The results showed that the chemical doping improved the specific capacitance.When the mol ratio of Co(Ⅱ) with Al(Ⅲ)was 1∶0.05,the specific capacitance was up to 518.07 F/g within 0～400 mV potenitial at current density 5 mA/cm2.作者联系地址：哈尔滨工程大学材料科学与化学工程学院,哈尔滨工程大学材料科学与化学工程学院,哈尔滨工程大学材料科学与化学工程学院,哈尔滨工程大学材料科学与化学工程学院 黑龙江哈尔滨150001,黑龙江哈尔滨150001,黑龙江哈尔滨150001,黑龙江哈尔滨150001Author's Address: College of Material science and Chemical Engineering,Harbin Engineering University,Harbin 150001,Heilongjiang,Chin
