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unknown
Device Quality GaN on Sapphire Grown by Three-step MOCVD
Authors
刘宝林
Publication date
1 January 2001
Publisher
半导体光电
Abstract
在传统的二步MOCVD外延生长的基础上 ,报道了一种在低压MOCVD中用三步外延生长GaN材料的新方法 ,它在生长低温缓冲层前 ,用原子层的方法生长一层高质量的AlN层来减少Al2 O3与GaN缓冲层之间的应力以提高缓冲层的质量 ,从而提高外延层GaN的质量 ,达到器件制作的要求福建省自然科学基金重点资助项目 (E982 0 0 0 1
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Last time updated on 16/06/2016