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Electronic Structures of Zinc-Blende GaN (001) Surface
Authors
冯夏
康俊勇
朱梓忠
蔡端俊
Publication date
1 January 2001
Publisher
半导体学报
Abstract
采用混合基表示的第一原理赝势方法 ,计算了闪锌矿结构的 Ga N(0 0 1) (1× 1)干净表面的电子结构 .分析了得到的各原子分态密度、面电荷密度分布以及表面能带结构等性质 ,比较了 Ga N(0 0 1)的 Ga端表面和 N端表面两种情况 .结果显示 ,闪锌矿 Ga N(0 0 1)的 Ga端表面比 N端表面更稳定 ,这两种 (1× 1)表面都是金属特性 .此外 ,还讨论了次表面层原子的性质国家高技术研究发展计划 ( 86 3-715 -0 10 -0 0 2 2 );; 国家自然科学基金( 6 9976 0 2 3);; 福建省自然科学基金( A0 0 2 0 0 1)资助项
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Last time updated on 16/06/2016