【中文摘要】 分别用光致发光谱(PL)、光伏谱(PV)及时间分辨谱(TRPL)的方法,测量了应变InGaAs/GaAs单量子阱和多量子阱在不同温度下的光谱,发现单量子阱与多量子阱有不同的光学性质。多量子阱PL谱发光峰和PV谱激子峰的强度与半高宽都比单量子阱的大,但单量子阱的半高宽随着温度的升高增大很快,这是由激子 声子耦合引起的。通过时间分辨谱研究发现了量子阱子能级之间的跃迁,多量子阱的发光寿命明显比单量子阱的长。我们利用形变势模型对量子阱的能带进行了计算,很好地解释了实验结果。
【英文摘要】 Methods of photoluminescence(PL) photovoltage(PV), and timeresolved spectrum(TRS) are applied to study InGaAs/GaAs strained quantum well. We discover singlequantum well(SQW) and multiquantum well(MQW) have different spectral properties; and spectral intensity of MQW is much higher and spectral full width at half maximum (FWHM) is larger than those of SQW, but spectral FWHM of SQW increases more quickly than that of MQW, which is caused by excitonLO phonon coupling. The peaking energy of 11H obtained fro...福建省自然科学基金重点资助项目(A992001
