Phonon self-energy corrections have mostly been studied theoretically and
experimentally for phonon modes with zone-center (q = 0) wave-vectors. Here,
gate-modulated Raman scattering is used to study phonons of a single layer of
graphene (1LG) in the frequency range from 2350 to 2750 cm-1, which shows the
G* and the G'-band features originating from a double-resonant Raman process
with q \not= 0. The observed phonon renormalization effects are different from
what is observed for the zone-center q = 0 case. To explain our experimental
findings, we explored the phonon self-energy for the phonons with non-zero
wave-vectors (q \not= 0) in 1LG in which the frequencies and decay widths are
expected to behave oppositely to the behavior observed in the corresponding
zone-center q = 0 processes. Within this framework, we resolve the
identification of the phonon modes contributing to the G* Raman feature at 2450
cm-1 to include the iTO+LA combination modes with q \not= 0 and the 2iTO
overtone modes with q = 0, showing both to be associated with wave-vectors near
the high symmetry point K in the Brillouin zone