Proper point defects in gallium arsenide alloying crystals

Abstract

The paper is concerned with gallium arsenide monocrystals. The purpose of the paper is to determine main relationships of the structure perfection change of gallium arsenide crystals at alloying; to give practical recommendations for producing monocrystals with specified electrophysical and structure properties. In the result of the research the range of alloying admixture concentrations in which on the crystallization front inequilibrium entering of admixture and proper point defects occurs has been discovered; the effect of proper point defects on the dislocation structure formation has been shown; the correlation of microdefects formation with change of difference concentration of proper point defects has been determined. Heat-treatment conditions resulting in the annihilation of inequilibrium proper point defects in donor admixture pooralloyed crystals have been specified; new methods of metallographic inspection have been developed; a method of the qualitative evaluation of non-alloyed crystals composition has been offered. The process of small-dislocation gallium arsenide crystal growth has been developed and introduced in the pilot production. The efficiency of introduction is in the increase of tunnel diode yield and monocrystals yieldAvailable from VNTIC / VNTIC - Scientific & Technical Information Centre of RussiaSIGLERURussian Federatio