Strukturierung von Silizium mit Trockenaetzverfahren

Abstract

Phase Shift Masks (PSMs) allow to extend the optical lithography to the deep submicrometer range. A described technology for dry etching of quartz for the fabrication of PSMs comprises reactive ion etching with CF_4/SF_6+O_2 chemistry and a chromium and/or resist/chromium mask. The chromium layer serves two purposes: (i) it defines the structures with high resolution and low edge roughness, and (ii) it is used as an attenuating layer for rim-type PSM after wet etching or as a phase shifter in combination with the residual resist layer. The high resist selectivity required for dry etching of both chromium and quartz in one step is guaranteed using newly developed CARs, Novolak-based AZ PF514, AZ PN114 and non-Novolak-based CAMP6. MEMs fabrication offer the potential to manufacture microengines, micro-turbines, micro-sensors, micro-actuators, and electronic circuits onto a single silicon chip. Adjusting and mounting of micromechanical parts can be done by using a sacrificial SiN_xO_y-layer. (WEN)SIGLEAvailable from TIB Hannover: F97B205+a / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekBundesministerium fuer Bildung, Wissenschaft, Forschung und Technologie, Bonn (Germany)DEGerman