MOVPE mit alternativen Quellen zur Darstellung von opto-elektronischen Bauelementen Schlussbericht

Abstract

Results of atmospheric and low pressure MOVPE growth of AIAs, GaAs, InAs, GaP, InP, (AIGa)As and (AIGaIn)P structures using alternative column-III-precursors are presented. This is the first report of MOVPE growth studies for the newly developed sources: Bis-(N-Allylaminodimethylgallium), (C_1_0H_2_4N_2Ga_2); Dimethylaminopropyldimethylindium (DADI); Dimethylaminopropylalan (DAAIH_2); Trimethylaminonomethylalan, 1-(3-Diethylaminopropyl)-1-diisopropylaluminium; 1-(3-Dimehtylaminopropyl)-1-ala-cyclohexan. Electrical and optical characterization of (AIGa)As layers revealed the intramolecular alane (DAAIH-2) as an interesting group-III-precursor. In this work we have investigated the MOVPE growth of lattice matched (AIGaIn)P using standard sources, too. The influence of the growth conditions on the properties of the grown layers such as lattice mismatch, photoluminescence wavelength, FWHM of PL-peaks and the atomic ordering is discussed. A study of the MOVPE growth mode of highly strained InAs/GaAs heterostructures and InAs monolayers embedded in the bulklike GaAs is reported. (orig.)Available from TIB Hannover: F95B1378+a / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekSIGLEBundesministerium fuer Forschung und Technologie (BMFT), Bonn (Germany)DEGerman