Duennschicht-Multilayer hoher Packungsdichte fuer die Aufbau- und Verbindungstechnik Teilprojekt 2: Erforschung von Herstellverfahren fuer Duennschicht-Multilayer hoher Packungsdichte. Schlussbericht

Abstract

SiO_x layers as an example for often used insulating films were tested in order to investigate their deposition method with respect to multilayer application by means of thin film science. Following electron optical and interface analytical results the qualities are in correlation with deposition parameters. Especially gas incorporation - detected by secondary ions OH"+ and SiOH"+ in SIMS - as well as bulk density and crosslinking are in correlation with thermal stability and stability against e"--irradiation in TEM. Dry etched pattern in polycrystalline Si made by RIE with Cl for instance in CECR-processes showed no process residues using REM, TEM, XPS and SIMS. From this aspect the patterning process is suitable for application in thin film systems too. The addition of these new methods to generate films and pattern to conventional methods to produce multilayers will open possibilities of further applications for instant in LCD-technique or in users terminals in information techniques. (orig.)SIGLEAvailable from TIB Hannover: F94B0012+a / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekBundesministerium fuer Forschung und Technologie (BMFT), Bonn (Germany)DEGerman