Wechselwirkungen zwischen Versetzungen und Punktdefekten in Halbleitern

Abstract

The theme of the present thesis is the influence of dislocations on the point-defect population in semiconductor crystals. A connection is stated between the mechanism of the dislocation motion and the formation of structural point defects like vacancies, interstitial atoms, and antisite defects. Different types of emitted point defects were spectroscopically observed in dependence on deformation parameters. Measured stress-strain curves were evaluated by empirical models in order to determine the activation parameters of the dislocation motion in connection with the point defect generation.Available from: http://sundoc.bibliothek.uni-halle.de/habil-online/01/01H089/habil.pdf / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekSIGLEDEGerman