In this work a specific measurement device for the fs stroboscopy of electric transport properties of new materials is designed. With this method it was possible to study the rf properties of the high-Tc superconductor YBa_2Cu_3O_7_-_x on LaAlO_3 and on the semiconductors Si and GaAs in the frequency range 10 to 600 GHz. The pulses were detected via the electro-optical effect in LaTaO_3. (WL)Available from TIB Hannover: RA 831(2895) / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekSIGLEDEGerman