Irradiation tests of double-sided silicon strip detectors with a special guard ring structure

Abstract

The results of the first irradiation tests of newly designed silicon microstrip detectors performed with 21 MeV protons at the Max-Planck-Institut in Heidelberg are presented. The detectors were developed and produced by the semiconductor laboratory of the Max-Planck-Institut in Munich. Novel guard ring structures allow operation of the detectors at voltages exceeding 300 V. (orig.)11 refs.SIGLEAvailable from TIB Hannover: RR 2916(95-29) / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekDEGerman