Thin film coatings for new generation infrared thermal picture synthesising devices

Abstract

The usefulness of infrared imaging devices has been proved by the continuous marketing of such products for more than 10 years. The need to produce thermal images with high apparent temperature values (600-800 deg. C) in the 3-5 micron waveband, mean that the operating temperature of the device pixels must be high. Such high temperature operation compromises the lifetime and switching speed of the pixels. It is hence desired that the real temperature of the pixels is kept as low as possible to achieve the desired apparent temperature. This requires coating the pixels with a high emissivity coating in the infrared. Current devices have multi-layer double resonating cavity interference structures built on their top surface. These structures enhance the emissivity of the pixels to a value around 50%. However, the manufacturing of such structures on top of the delicate pixels is time intensive and involves many delicate processes, which increase the probability of device failure during manufacture. The work presented in this thesis aims at achieving a simple and quick process that will provide the pixels with a single high emissivity coating. The process is carried out using standard cleanroom equipment with the coating aimed at being than one micron thick, and being able to withstand the operating temperatures of the pixel under ambient atmospheres. The work concludes with an optimised sputter-deposition process of two coatings with a combined thickness of 7000A, followed by annealing at 700 deg. C. This process achieves a coating with an emissivity of 84%. The work also describes the deposition of a thermally stable SiC coating which is highly transparent in the infrared. (author)SIGLEAvailable from British Library Document Supply Centre-DSC:DXN041625 / BLDSC - British Library Document Supply CentreGBUnited Kingdo