Two subharmonically pumped (SHP) diode mixers are designed for wideband W-band RF frequencies, fixed LO frequency operation. These mixers are fabricated on a 4-mil substrate using 0.1- µµµµm GaAs MMIC process. Both simulation and test results show that the mixers are with 12.25 and 11.75 dB average conversion losses, respectively. Both mixers have IF bandwidth wider than 20 GHz. The conversion loss flatness of the symmetric circuit is within ±1.25 dB. To our knowledge, these are the state-of-the-art result on low-conversion-loss wideband MMIC SHP diode mixers

Chu, Tah-Hsiung

Hwang, Yuh-Jing

Wang, Huei

English

AMS Acta

32th European Microwave Conference / GAAS 2002, Session JGM2   W-Band GaAs HEMT MMIC Subharmonically Pumped Diode Mixers with 20 GHz IF Bandwidth Yuh-Jing Hwang(1)(2), Huei Wang(1), and Tah-Hsiung Chu(1)(2) (1) Department of Communication Engineering and Department of Electrical Engineering, National Taiwan University, 1 Roosevelt Rd., Sec. 4, Taipei, 106, Taiwan, R.O.C. (2) Academia Sinica Institute of Astronomy & Astrophysics, P.O. Box 23-141, Taipei, 106, Taiwan, R.O.C. Email: yjhwang@asiaa.sinica.edu.tw, hueiwang@ew.ee.ntu.edu.tw, thc@ew.ee.ntu.edu.tw  Two subharmonically pumped (SHP) diode mixers are designed for wideband W-band RF frequencies, fixed LO frequency operation. These mixers are fabricated on a 4-mil substrate using 0.1-µm GaAs MMIC process. Both simulation and test results show that the mixers are with 12.25 and 11.75 dB average conversion losses, respectively. Both mixers have IF bandwidth wider than 20 GHz. The conversion loss flatness of the symmetric circuit is within ±1.25 dB. To our knowledge, these are the state-of-the-art result on low-conversion-loss wideband MMIC SHP diode mixers. INTRODUCTION Radio astronomy receivers require wide bandwidth to search the spectrum of molecular species in space with different redshift [1], or to observe the wideband continuum radiation, e.g. cosmic background radiation. In the past the high-performance heterodyne receivers are based on superconductor-insulator-superconductor mixers with only several GHz IF bandwidth. Recent progress on the development of cryogenic millimeter- wave HEMT low-noise amplifiers makes the LNA- based wideband heterodyne receivers for MMW astronomy possible [2]-[5]. Wideband mixers are essential components for those LNA-based heterodyne receivers. For the MMW astronomical receiver application, we design SHP diode mixers with 20-GHz IF bandwidth and only ± 1.25 dB conversion loss flatness at RF frequency range between 85-105 GHz with fixed LO frequency at 42 GHz. CIRCUIT DESIGN The W-band SHP mixers utilized anti-parallel HEMT diode pairs are designed to down-convert 85 to 105 GHz RF signal to IF frequency of 1 to 21 GHz by mixing with the second harmonic of a 42-GHz LO signal. The mixer designs are fabricated by a GaAs PHEMT MMIC process on 4-mil substrate, using diodes with 0.1-µm gates length and 16-µm total periphery. In order to achieve the widest IF frequency bandwidth on the upper sideband, we explore two slightly different circuit structures. The first design, with chip named WSHM1, is adapted from the typical SHP mixer circuit structure [6][7], with simple RF-IF diplexer circuit consists of a coupled-line RF band-pass filter and a step impedance line section IF low-pass filter. Near the diode pair, a LO frequency quarter-wavelength open stub at RF input and a RF half-wavelength short-circuit stub at LO input are used to improve the isolation between RF and LO. The other mixer design, WSHM2, is adapted from another circuit structures [8]-[10]. This design emphasizes the RF and LO circuit symmetry near the diode pair. In order to get better RF-IF isolation, we arrange two RF quarter wavelength sections along the IF matching network, with one in series and the other shunt in half way. Over the desired RF frequency band, this arrangement keeps the input impedance at the shunt point almost short circuit, while the IF input impedance at the RF-IF connecting junction looks almost open circuit, which establishes good RF-IF isolation inherently. Stepped- impedance IF low-pass filter consists of the in-series RF quarter wavelength section to reduce the size. Both MMIC chip layouts are shown on Figure 1 and Figure 2.  Figure 1:Photograph of WSHM1 SHP mixer MMIC chips.. The design has the RF port on the left side, LO port on the right side, and the IF port on the bottom side.  32th European Microwave Conference / GAAS 2002, Session JGM2    Figure 2: Photograph of WSHM2 SHP mixer MMIC chips. Individual port orientations are the same as WSHM1. CIRCUIT PERFORMANCE Simulation The SHP mixers are simulated using HP/EEsof harmonic balance analysis. The critical matching circuit structures, such as the RF parallel coupled line band-pass filter, four- and five-port junctions connected to the diode pars, and microstrip tees junctions were analyzed numerically using Sonnet EM-software to ensure reasonable accuracy. The simulated conversion loss of the WSHM1 mixer over 85-102 GHz RF frequencies is about 12.5-17.5 dB with 7.0-dBm 42-GHz LO power. The simulation results for the WSHM2 mixer design show that the conversion loss is about 9 to 11 dB across 85-105 GHz, as a 7.0-dBm 42-GHz LO signal is pumped. Simulation of the return loss gives about 5-11dB at RF input port over 85-105 GHz, 15-18 dB at LO port with 42-GHz frequency and better than 7 dB at IF port over 1-21 GHz, for both WSHM1 and WSHM2. Simulation data also shows that the triple-frequency LO to RF (3xLO-RF) isolation is 40 dB over 36-50 GHz, and with 7-8 dBm LO power the LO-IF and LO-RF isolations are about 20 to 25 dB and 36 dB, respectively. Conversion Loss Measurement The SHP conversion loss is measured with –17dBm RF input power provided by a W85104A test set of an Agilent 85106D vector network analyzer, which operated in CW single-frequency mode as an extended W-band synthesizer over 68-118 GHz. A Q-band power source composed by a WR-22 mechanically-tunable Gunn oscillator and waveguide attenuators is used to provide LO signal at 42 GHz, one of the calibrated variable attenuator is used to adjust the LO power to appropriate level. The IF output spectrum was examined by a spectrum analyzer to ensure the unwanted spurious output 10-15 dB lower than the IF signal, then measured the IF output power by a power sensor, through a calibrated 0.01-20 GHz low-noise amplifier. Beyond 20GHz, the unwanted spurious output level become significant so the IF power is measured directly by spectrum analyzer. The conversion loss measured results, as shown on Figure 3 and Figure 4 below, are 9.8-12.0 dB for WSHM2 under a 7.0-dBm LO power and 10.6-14.3 dB for WSHM1 under 8.5-dBm LO power.  (a)  (b) Figure 3: Conversion loss of WSHM1 (a) and WSHM2 (b) SHP diode mixers. RF frequency range is 85 to 110 GHz. 42GHz LO pump level are with 8.5 dBm and 7.1 dBm, respectively.   Figure 4: Relations between the LO power level and the measured conversion loss. RF frequency is set to 93 GHz and the LO frequency is fixed at 42 GHz. 32th European Microwave Conference / GAAS 2002, Session JGM2   Return Loss and Isolation Measurement The return losses of the RF, LO and IF ports are measured by a vector network analyzer with one-port calibration. The results are shown on Figure 5, Figure 6, and Figure 7.   Figure 5: RF return loss measurement results.  Figure 6: LO return loss measurement results. Please note that due to the low output power capability of VNA, the power pumped to the LO port is –23.8 dBm.   Figure 7: IF return loss measurement results. RF is terminated with a WR-10 terminator through a GSG probe and the LO power level is 7.5 dBm. LO-IF isolation is measured by both power meter at 42 GHz with sufficient LO input power and VNA through a medium power amplifier from 33 to 50 GHz, with RF port with WR-10 waveguide terminator through GSG probe. LO-RF isolation is measured at 33-50 GHz by VNA. Figure 8 shows the VNA measured results of LO IF and LO-RF isolation. The 3xLO-RF isolation is measured by WR-10 power sensor connected to RF port through GSG probe and IF port terminated. The results at 42-GHz LO frequency are 25 dB for WSHM1 and 27 dB for WSHM2, respectively.  (a)  (b) Figure 8: Measured transmission coefficients of (a) LO to IF port and (b) LO to RF port. Both were done by VNA, with LO power level at about 1.4 dBm. Circuit Performance Summary The performance of these two SHP diode mixers, in comparison between simulation and measurement results, is listed in Table 1. From the results one can find that the comprehensive RF-IF diplexer with better isolation can improve the mixer conversion loss about 0.8 dB. CONCLUSION The design and test of W-band broadband SHP MMIC diode mixers using 0.1-µm GaAs PHEMT process is presented. The measured down-conversion loss shows a good performance with IF frequency wider than 20GHz. ACKNOWLEDGMENT This work is supported by Ministry of Education under 32th European Microwave Conference / GAAS 2002, Session JGM2   Grant 89-N-FA-01-4-1 and 89E-FA06-2-4-6. The authors would like to thank Dr. Y. Z. Juang in Chip Implementation Center for the coordination effort on providing TRW GaAs MMIC foundry service. References [1] T. G. Phillips and J. Keene, “Submillimeter astronomy,” Proceedings of the IEEE, vol. 80, No. 11, pp. 1662-1678, Nov. 1992. [2] P. Kangaslahti, T. Gaier, D. Dawson, J. Tuovinen, T. Karttaavi, M. Lahdes, N. J. Hughes, T. L. Cong, P. Jukkala, P. Sjoman, and S. Weinreb, “Low noise amplifiers in InP technology for pseudo correlating millimeter wave radiometer,” 2001 IEEE MTT-S Int. Microwave Symp. Dig., June 2001. [3] N. L. Erickson, R. L. Grosslein, R.B. Erickson, S. Weinreb, “A cryogenic focal plan array for 85-115GHz using MMIC preamplifiers,” IEEE Trans. Microwave Theory Tech., Vol. MTT-47, No. 12, pp. 2212-2219, Dec. 1999. [4] M. W. Pospieszalski, E. J. Wollack, N. Bailey, D. Thacker, J. Webber, L. D. Nguyen, M. Le, and M. Lui, “Design and performance of wideband, low-noise, millimeter-wave amplifiers for microwave anisotropy probe radiometers,” 2000 IEEE MTT-S Int. Microwave Symp. Dig., June 2000. [5] M. T. Chen, Y. -J. Hwang, M. S. Ho, H. -M. Jiang, T. -H. Chu, S. -C. Lu, and M. W. Sinclair, “Full-polarization W-band receiver for CMB detection,” Proceedings of SPIE Conference on Millimeter and Submillimeter Detector for Astronomy, paper # 4855-38, August, 2002. [6] Y.-L. Kok, H. Wang, M. Barsky, R. Lai, M. Sholley, and. B. Allen, "A 180-GHz monolithic sub-harmonic InP-based HEMT diode mixer, " IEEE Microwave and Guided Wave Letters, vol. 9, No. 12, pp. 529-531, Dec. 1999. [7] Y.-L. Kok, P.-P. Huang, H. Wang, B.R. Allen, M. Sholley, T. Gaier and I. Mehdi, “120 and 60 GHz monolithic InP-based HEMT diode sub-harmonic mixer,” 1998 IEEE MTT-S Int. Microwave Symp. Dig., vol. 1, pp. 43-46, June 1998. [8] S. Raman, F. Rucky and G. M. Rebeiz, “A high-performance W-band uniplanar subharmonic mixer,” IEEE Trans. Microwave Theory Tech., Vol. MTT-45, No. 6, pp. 955-962, June 1997. [9] A. Madjar, “A novel general approach for the optimum design of microwave and millimeter wave subharmonic mixers,” IEEE Trans. Microwave Theory Tech., Vol. MTT-44, No. 11, pp. 1997-1999, Nov. 1996. [10] Y. -J. Hwang, C. -H. Lien, Huei Wang, R. G. Gough, M. W. Sinclair, H. Kanuniuk and T. -H. Chu, “A 78-114GHz monothilic subharmonically pumped GaAs-based HEMT diode mixer,” IEEE Microwave and Wireless Device Letter, Vol.12, No. 6, pp. 209-211, June 2002.  Table 1 Summary of SHP diode mixers performance  WSHM1 WSHM2  Simulation Measurement Simulation MeasurementRF Frequency Range 85-102GHz 85-105GHz 85-106GHz 85-110GHz LO Frequency  42 GHz 42 GHz 42 GHz 42 GHz LO Power 7 dBm 8.5 dBm 7 dBm 7.1 dBm IF Frequency 16GHz 25GHz 22GHz 26GHz Conversion Loss  12.5-17.5dB 10.2-14.3 dB 9-11dB 10.5-13.0 dB RF Matching < -5.0 dB <-4.8 dB < -10.0 dB <-6.0 dB LO Matching frequency 42 GHz 41.5 GHz 42GHz 41.33 GHz IF Matching (f < 21 GHz) < -7 dB <-7 dB <-8dB <-7 dB LO-IF Isolation (PLO=7.5 dBm) >20dB 21.03 dB >25dB 26.05 dB LO-RF Isolation (PLO=1.4 dBm) 36 dB 20 dB 36 dB 15 dB 3xLO-RF Isolation 40.5 dB 25.2 dB 41.0 dB 27.4 dB  

W-Band GaAs HEMT MMIC Subharmonically Pumped Diode Mixers with 20 GHz IF Bandwidth

Crossref

32th European Microwave Conference / GAAS 2002, Session JGM2 
  
W-Band GaAs HEMT MMIC Subharmonically Pumped 
Diode Mixers with 20 GHz IF Bandwidth 
Yuh-Jing Hwang(1)(2), Huei Wang(1), and Tah-Hsiung Chu(1)(2) 
(1) Department of Communication Engineering and Department of Electrical Engineering, National 
Taiwan University, 1 Roosevelt Rd., Sec. 4, Taipei, 106, Taiwan, R.O.C. 
(2) Academia Sinica Institute of Astronomy & Astrophysics, P.O. Box 23-141, Taipei, 106, Taiwan, 
R.O.C. 
Email: yjhwang@asiaa.sinica.edu.tw, hueiwang@ew.ee.ntu.edu.tw, thc@ew.ee.ntu.edu.tw 
 
Two subharmonically pumped (SHP) diode mixers are designed for wideband W-band RF frequencies, 
fixed LO frequency operation. These mixers are fabricated on a 4-mil substrate using 0.1-µm GaAs 
MMIC process. Both simulation and test results show that the mixers are with 12.25 and 11.75 dB average 
conversion losses, respectively. Both mixers have IF bandwidth wider than 20 GHz. The conversion loss 
flatness of the symmetric circuit is within ±1.25 dB. To our knowledge, these are the state-of-the-art result 
on low-conversion-loss wideband MMIC SHP diode mixers. 
INTRODUCTION 
Radio astronomy receivers require wide bandwidth to 
search the spectrum of molecular species in space with 
different redshift [1], or to observe the wideband 
continuum radiation, e.g. cosmic background radiation. 
In the past the high-performance heterodyne receivers 
are based on superconductor-insulator-superconductor 
mixers with only several GHz IF bandwidth. Recent 
progress on the development of cryogenic millimeter- 
wave HEMT low-noise amplifiers makes the LNA- 
based wideband heterodyne receivers for MMW 
astronomy possible [2]-[5]. Wideband mixers are 
essential components for those LNA-based heterodyne 
receivers. For the MMW astronomical receiver 
application, we design SHP diode mixers with 20-GHz 
IF bandwidth and only ± 1.25 dB conversion loss 
flatness at RF frequency range between 85-105 GHz 
with fixed LO frequency at 42 GHz. 
CIRCUIT DESIGN 
The W-band SHP mixers utilized anti-parallel HEMT 
diode pairs are designed to down-convert 85 to 105 GHz 
RF signal to IF frequency of 1 to 21 GHz by mixing 
with the second harmonic of a 42-GHz LO signal. The 
mixer designs are fabricated by a GaAs PHEMT MMIC 
process on 4-mil substrate, using diodes with 0.1-µm 
gates length and 16-µm total periphery. 
In order to achieve the widest IF frequency bandwidth 
on the upper sideband, we explore two slightly different 
circuit structures. The first design, with chip named 
WSHM1, is adapted from the typical SHP mixer circuit 
structure [6][7], with simple RF-IF diplexer circuit 
consists of a coupled-line RF band-pass filter and a step 
impedance line section IF low-pass filter. Near the diode 
pair, a LO frequency quarter-wavelength open stub at RF 
input and a RF half-wavelength short-circuit stub at LO 
input are used to improve the isolation between RF and 
LO. 
The other mixer design, WSHM2, is adapted from 
another circuit structures [8]-[10]. This design 
emphasizes the RF and LO circuit symmetry near the 
diode pair. In order to get better RF-IF isolation, we 
arrange two RF quarter wavelength sections along the IF 
matching network, with one in series and the other shunt 
in half way. Over the desired RF frequency band, this 
arrangement keeps the input impedance at the shunt 
point almost short circuit, while the IF input impedance 
at the RF-IF connecting junction looks almost open 
circuit, which establishes good RF-IF isolation 
inherently. Stepped- impedance IF low-pass filter 
consists of the in-series RF quarter wavelength section 
to reduce the size. Both MMIC chip layouts are shown 
on Figure 1 and Figure 2. 
 
Figure 1:Photograph of WSHM1 SHP mixer MMIC chips.. The 
design has the RF port on the left side, LO port on 
the right side, and the IF port on the bottom side. 
 
32th European Microwave Conference / GAAS 2002, Session JGM2 
  
 
Figure 2: Photograph of WSHM2 SHP mixer MMIC chips. 
Individual port orientations are the same as 
WSHM1. 
CIRCUIT PERFORMANCE 
Simulation 
The SHP mixers are simulated using HP/EEsof 
harmonic balance analysis. The critical matching circuit 
structures, such as the RF parallel coupled line 
band-pass filter, four- and five-port junctions connected 
to the diode pars, and microstrip tees junctions were 
analyzed numerically using Sonnet EM-software to 
ensure reasonable accuracy. 
The simulated conversion loss of the WSHM1 mixer 
over 85-102 GHz RF frequencies is about 12.5-17.5 dB 
with 7.0-dBm 42-GHz LO power. The simulation results 
for the WSHM2 mixer design show that the conversion 
loss is about 9 to 11 dB across 85-105 GHz, as a 
7.0-dBm 42-GHz LO signal is pumped. 
Simulation of the return loss gives about 5-11dB at RF 
input port over 85-105 GHz, 15-18 dB at LO port with 
42-GHz frequency and better than 7 dB at IF port over 
1-21 GHz, for both WSHM1 and WSHM2. Simulation 
data also shows that the triple-frequency LO to RF 
(3xLO-RF) isolation is 40 dB over 36-50 GHz, and with 
7-8 dBm LO power the LO-IF and LO-RF isolations are 
about 20 to 25 dB and 36 dB, respectively. 
Conversion Loss Measurement 
The SHP conversion loss is measured with –17dBm RF 
input power provided by a W85104A test set of an 
Agilent 85106D vector network analyzer, which 
operated in CW single-frequency mode as an extended 
W-band synthesizer over 68-118 GHz. A Q-band power 
source composed by a WR-22 mechanically-tunable 
Gunn oscillator and waveguide attenuators is used to 
provide LO signal at 42 GHz, one of the calibrated 
variable attenuator is used to adjust the LO power to 
appropriate level. The IF output spectrum was examined 
by a spectrum analyzer to ensure the unwanted spurious 
output 10-15 dB lower than the IF signal, then measured 
the IF output power by a power sensor, through a 
calibrated 0.01-20 GHz low-noise amplifier. Beyond 
20GHz, the unwanted spurious output level become 
significant so the IF power is measured directly by 
spectrum analyzer. The conversion loss measured results, 
as shown on Figure 3 and Figure 4 below, are 9.8-12.0 
dB for WSHM2 under a 7.0-dBm LO power and 
10.6-14.3 dB for WSHM1 under 8.5-dBm LO power. 
 
(a) 
 
(b) 
Figure 3: Conversion loss of WSHM1 (a) and WSHM2 (b) 
SHP diode mixers. RF frequency range is 85 to 110 
GHz. 42GHz LO pump level are with 8.5 dBm and 
7.1 dBm, respectively. 
 
 
Figure 4: Relations between the LO power level and the 
measured conversion loss. RF frequency is set to 
93 GHz and the LO frequency is fixed at 42 GHz. 
32th European Microwave Conference / GAAS 2002, Session JGM2 
  
Return Loss and Isolation Measurement 
The return losses of the RF, LO and IF ports are 
measured by a vector network analyzer with one-port 
calibration. The results are shown on Figure 5, Figure 6, 
and Figure 7.  
 
Figure 5: RF return loss measurement results. 
 
Figure 6: LO return loss measurement results. Please note that 
due to the low output power capability of VNA, the 
power pumped to the LO port is –23.8 dBm. 
 
 
Figure 7: IF return loss measurement results. RF is terminated 
with a WR-10 terminator through a GSG probe and 
the LO power level is 7.5 dBm. 
LO-IF isolation is measured by both power meter at 42 
GHz with sufficient LO input power and VNA through a 
medium power amplifier from 33 to 50 GHz, with RF 
port with WR-10 waveguide terminator through GSG 
probe. LO-RF isolation is measured at 33-50 GHz by 
VNA. Figure 8 shows the VNA measured results of LO 
IF and LO-RF isolation. The 3xLO-RF isolation is 
measured by WR-10 power sensor connected to RF port 
through GSG probe and IF port terminated. The results 
at 42-GHz LO frequency are 25 dB for WSHM1 and 27 
dB for WSHM2, respectively. 
 
(a) 
 
(b) 
Figure 8: Measured transmission coefficients of (a) LO to IF 
port and (b) LO to RF port. Both were done by VNA, 
with LO power level at about 1.4 dBm. 
Circuit Performance Summary 
The performance of these two SHP diode mixers, in 
comparison between simulation and measurement results, 
is listed in Table 1. From the results one can find that the 
comprehensive RF-IF diplexer with better isolation can 
improve the mixer conversion loss about 0.8 dB. 
CONCLUSION 
The design and test of W-band broadband SHP MMIC 
diode mixers using 0.1-µm GaAs PHEMT process is 
presented. The measured down-conversion loss shows a 
good performance with IF frequency wider than 20GHz. 
ACKNOWLEDGMENT 
This work is supported by Ministry of Education under 
32th European Microwave Conference / GAAS 2002, Session JGM2 
  
Grant 89-N-FA-01-4-1 and 89E-FA06-2-4-6. The 
authors would like to thank Dr. Y. Z. Juang in Chip 
Implementation Center for the coordination effort on 
providing TRW GaAs MMIC foundry service. 
References 
[1] T. G. Phillips and J. Keene, “Submillimeter astronomy,” 
Proceedings of the IEEE, vol. 80, No. 11, pp. 1662-1678, 
Nov. 1992. 
[2] P. Kangaslahti, T. Gaier, D. Dawson, J. Tuovinen, T. 
Karttaavi, M. Lahdes, N. J. Hughes, T. L. Cong, P. Jukkala, 
P. Sjoman, and S. Weinreb, “Low noise amplifiers in InP 
technology for pseudo correlating millimeter wave 
radiometer,” 2001 IEEE MTT-S Int. Microwave Symp. 
Dig., June 2001. 
[3] N. L. Erickson, R. L. Grosslein, R.B. Erickson, S. 
Weinreb, “A cryogenic focal plan array for 85-115GHz 
using MMIC preamplifiers,” IEEE Trans. Microwave 
Theory Tech., Vol. MTT-47, No. 12, pp. 2212-2219, Dec. 
1999. 
[4] M. W. Pospieszalski, E. J. Wollack, N. Bailey, D. Thacker, 
J. Webber, L. D. Nguyen, M. Le, and M. Lui, “Design and 
performance of wideband, low-noise, millimeter-wave 
amplifiers for microwave anisotropy probe radiometers,” 
2000 IEEE MTT-S Int. Microwave Symp. Dig., June 
2000. 
[5] M. T. Chen, Y. -J. Hwang, M. S. Ho, H. -M. Jiang, T. -H. 
Chu, S. -C. Lu, and M. W. Sinclair, “Full-polarization 
W-band receiver for CMB detection,” Proceedings of 
SPIE Conference on Millimeter and Submillimeter 
Detector for Astronomy, paper # 4855-38, August, 2002. 
[6] Y.-L. Kok, H. Wang, M. Barsky, R. Lai, M. Sholley, and. 
B. Allen, "A 180-GHz monolithic sub-harmonic InP-based 
HEMT diode mixer, " IEEE Microwave and Guided Wave 
Letters, vol. 9, No. 12, pp. 529-531, Dec. 1999. 
[7] Y.-L. Kok, P.-P. Huang, H. Wang, B.R. Allen, M. Sholley, 
T. Gaier and I. Mehdi, “120 and 60 GHz monolithic 
InP-based HEMT diode sub-harmonic mixer,” 1998 IEEE 
MTT-S Int. Microwave Symp. Dig., vol. 1, pp. 43-46, 
June 1998. 
[8] S. Raman, F. Rucky and G. M. Rebeiz, “A 
high-performance W-band uniplanar subharmonic mixer,” 
IEEE Trans. Microwave Theory Tech., Vol. MTT-45, No. 
6, pp. 955-962, June 1997. 
[9] A. Madjar, “A novel general approach for the optimum 
design of microwave and millimeter wave subharmonic 
mixers,” IEEE Trans. Microwave Theory Tech., Vol. 
MTT-44, No. 11, pp. 1997-1999, Nov. 1996. 
[10] Y. -J. Hwang, C. -H. Lien, Huei Wang, R. G. Gough, M. 
W. Sinclair, H. Kanuniuk and T. -H. Chu, “A 78-114GHz 
monothilic subharmonically pumped GaAs-based HEMT 
diode mixer,” IEEE Microwave and Wireless Device 
Letter, Vol.12, No. 6, pp. 209-211, June 2002. 
 
Table 1 
Summary of SHP diode mixers performance 
 WSHM1 WSHM2 
 Simulation Measurement Simulation Measurement
RF Frequency Range 85-102GHz 85-105GHz 85-106GHz 85-110GHz 
LO Frequency  42 GHz 42 GHz 42 GHz 42 GHz 
LO Power 7 dBm 8.5 dBm 7 dBm 7.1 dBm 
IF Frequency 16GHz 25GHz 22GHz 26GHz 
Conversion Loss  12.5-17.5dB 10.2-14.3 dB 9-11dB 10.5-13.0 dB 
RF Matching < -5.0 dB <-4.8 dB < -10.0 dB <-6.0 dB 
LO Matching frequency 42 GHz 41.5 GHz 42GHz 41.33 GHz 
IF Matching (f < 21 GHz) < -7 dB <-7 dB <-8dB <-7 dB 
LO-IF Isolation (PLO=7.5 dBm) >20dB 21.03 dB >25dB 26.05 dB 
LO-RF Isolation (PLO=1.4 dBm) 36 dB 20 dB 36 dB 15 dB 
3xLO-RF Isolation 40.5 dB 25.2 dB 41.0 dB 27.4 dB 
 


http://amsacta.unibo.it/431/1/JGM2_Hwang.pdf

W-Band GaAs HEMT MMIC Subharmonically Pumped Diode Mixers with 20 GHz IF Bandwidth

Abstract

Similar works

Full text

Available Versions

AMS Acta

Crossref

AMS Acta