Disorder-induced InGaAsP/InP quantum well waveguides via phosphorous ion implantation

Abstract

We demonstrate formation of buried InGaAsP/InP quantum well waveguides by means of phosphorous ion implantation and thermal annealing during regrowth. We use absorption spectra of implanted and unimplanted regions to estimate the induced index difference, which is on the order of 1 % at 1.55 μm. Calculated mode intensities are in good agreement with the observed near field intensity patterns. With this etchless implant technique, we achieve a significant reduction in propagation loss for single-mode p-i-n waveguides relative to etched semi-insulating planar buried heterostructure waveguides fabricated from the same quantum well structure. This type of band-gap engineering, with its simplicity and high yield, lends itself to the fabrication of complex integrated optoelectronic circuits. These include integrated laser/modulators and switch arrays.</jats:p